FQB9N50TM

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FQB9N50TM Application Field and Working Principle

FQB9N50TM is a single-drain, silicon-gate insulated-gate field-effect transistor (IGFET) featuring a guaranteed Drain-Source Breakdown Voltage (BVDSS) of 500V, rated at 15A. It is a high voltage N-channel enhancement mode IGBT (Insulated-Gate Bipolar Transistor) built with a high-density DMOS structure. It is suitable for use in a variety of applications, from power supply circuits and power amplifiers to high frequency inverters and motor controller circuits.

This transistors\' working principle is relatively simple, making it a great choice for applications in which reliability is important. When a voltage is applied to the Gate of FQB9N50TM, it forms an electrical field that electrically turns on the N-channel, allowing current to flow through its Drain to Source (D-S) terminals. When the gate voltage drops below a certain level, current flow stops due to the depletion of gate voltage. A feature of this IGBT is its low gate charge. In addition, it has a low threshold voltage and a low on-state resistance (RON).

Benefits of Using FQB9N50TM

FQB9N50TM offers several benefits, including: high current handling capability, low gate charge, and low on-state resistance (RON). It offers a good thermal capability, high analog performance, fast switching speed and low noise operation. High current handling capability and low on-state resistance makes it ideal for switching applications such as motor control circuits and power supply circuits. It is also capable of operating up to 500V breakdown, which makes it suitable for high voltage circuit designs.

Applications

FQB9N50TM is suitable for a wide variety of applications, from consumer electronics to industrial automation. It can be used for power supply circuits and power amplifiers, and it is ideal for high frequency inverters and motor controller circuits. It is also suitable for high-voltage applications such as vacuum cleaner motors, air conditioner fans, and electric window actuators.

Conclusion

FQB9N50TM is a single-drain, silicon-gate insulated-gate field-effect transistor (IGFET) featuring a guaranteed Drain-Source Breakdown Voltage (BVDSS) of 500V and rated at 15A. Its working principle is relatively simple, and it offers several benefits, such as high current handling capability, low gate charge, and low on-state resistance (RON). It is suitable for a wide variety of applications, from consumer electronics to industrial automation. It is also capable of operating up to 500V breakdown, making it suitable for high voltage circuit designs.

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