FQB9N25TM

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The FQB9N25TM is a single n-channel enhancement mode field effect transistor (MOSFET) with high cell density technology. It was designed for portable electronic equipment and its main application fields include dc/dc converters, load switching regulators, load switches and mobile charger applications.

A MOSFET can be explained simply based upon the basic transistor circuit concepts of a three-terminal switch with two transistors in a single package. The two transistors, commonly known as the gate and drain, act as two switches. When the gate is switched on, current will flow through the transistor until the gate is turned off. A MOSFET is different because the gate is insulated between the two transistors. This means that no voltage is applied to the gate in order to control the transistor.

The FQB9N25TM is specifically designed for high efficiency power applications and to reduce the size of a switching regulator circuit. It has low on-resistance and provides fast switching speed. The transistor has a drain-source breakdown voltage (BVDSS) of 25V and a maximum drain current (ID) of 9A. Additionally, it has an on-resistance (RDS) of 0.045Ω max. at VGS = 10V. The FQB9N25TM also has an operational temperature range of -55°C to 150°C.

The FQB9N25TM’s working principle is based on the common-drain configuration. The device can be switched on and off by simply changing the gate voltage while regulating the drain current. When the gate voltage is high, the transistor is on and the current flows. When the gate voltage is low, the transistor is off and no current flows. The drain current is controlled by changing the gate voltage.

Due to its low on-resistance and fast switching speed, the FQB9N25TM is suitable for applications such as dc/dc converters, load switching regulators, load switches and mobile charger applications. In addition, the device is designed to be efficient and to reduce the size of the circuit, making it more compact and cost-effective.

The FQB9N25TM can also be used in other applications such as automotive and consumer electronics. Its low on-resistance and fast switching speed makes it ideal for power supply applications, particularly those that require high efficiency and low power consumption. Additionally, the device is temperature resistant and can be used in temperature extremes.

In summary, the FQB9N25TM is a single n-channel enhancement mode field effect transistor (MOSFET) with high cell density technology. It is designed for efficient power applications and offers low-on resistance and fast switching speed. Its main application fields include dc/dc converters, load switching regulators, load switches and mobile charger applications. As well as these, the device can be used in a variety of other applications such as automotive and consumer electronics. The working principle of the FQB9N25TM is based on a common-drain configuration and can be switched on and off simply by changing the gate voltage whilst regulating the drain current.

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