FQB9N25CTM

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The FQB9N25CTM is a N-channel enhancement-mode Power MOS transistor designed primarily for medium-to-high power switching applications. It is contained in a TO-252 (DPAK) package, which offers simple mounting and effective thermal coupling to the board. The FQB9N25CTM is suitable for use in applications such as computer power supplies, switch-mode power supplies, DC-to-DC converters, switching regulators, motor control, lighting control, and other applications where the high-side and low-side switches need to be driven separately.

The FQB9N25CTM integrates high-voltage and high-current capabilities in one device and offers high-side current level up to 11 A continuous. It features an extended voltage range that covers up to 600 V, with an operating voltage range of 20 V to 600 V. The FQB9N25CTM offers high switching speed, low on-state resistance (RDS(on)) and low gate charge (Qg) resulting in low power losses. The FQB9N25CTM is specifically designed to minimize total gate charge losses, making it suitable for voltage regulators, inverters, and other power control applications.

The working principle of FQB9N25CTM is based on the MOSFET (metal oxide semiconductor field-effect transistor). It is a type of transistor that is constructed with three terminals: the gate, the source and the drain. The FQB9N25CTM is a voltage-controlled device, meaning that it is operated by controlling the voltage between the gate and source terminals. When the voltage between the gate and source is increased, it creates a channel between the source and drain terminals, allowing current to flow which enables the current to be switched on or off with the control of the applied voltage.

The FQB9N25CTM offers superior switching performance, very low RDS(on) and fast switching speed. It is also a cost efficient solution due to its small size and power requirement. Its high-temperature capability and wide voltage range make it highly suitable for a wide range of switching applications. The FQB9N25CTM can be used in a variety of industrial and consumer electronics applications such as motor control, lighting control, appliance control, and power supply control.

In summary, the FQB9N25CTM is a versatile N-channel enhancement-mode Power MOSFET designed for medium-to-high power switching applications. It is based on the MOSFET construction and operates by controlling the voltage between the gate and source terminals. The extended voltage range and high switching speed make it an ideal solution for switching applications in industrial and consumer electronics.

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