FQB9N50CTM Discrete Semiconductor Products

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The FQB9N50CTM is a high-speed, low-loss transistor specifically designed to operate in today\'s high-performance, high-efficiency electric drive systems. It is constructed with an advanced transistors technology to integrate both the temperature and the voltage blocking, delivering improved operating current and high power densities. The FQB9N50CTM is used primarily in applications requiring ultra-low on-state resistance with superior dv/dt capabilities.

Application Field

The FQB9N50CTM is a power transistor specially designed for high-performance motor drives. It is suitable for many applications, such as electric submersible pumps, lawn mowers, lawn tractors and golf carts, electric scooters, medical systems, construction tools, home appliance, drives and pumps. Moreover, it is the ideal choice for power switches in the power device of torque control systems.

The FQB9N50CTM is suitable for PWM motor control applications, It features an expansive library of component hallmarks which include filament proven-reliability, perceptive turn-on and turn-off technique, along with low RDS( on-state resistance values. In addition, its thermal protection guarantees that its built-in gate protection and temperature stability.

With its high efficiency ratings combined with superior IC protection circuitry, the FQB9N50CTM reduces the temperature of the system, reducing power dissipation, significantly improving the performance of the connected devices.

Working Principle

The FQB9N50CTM offer superior switching performance and low RDS(on) characteristics thanks to its advanced transistor technology. It is composed of four n-channel MOSFETs connected in a half-bridge configuration. It offers low on-state resistance (RDS(on)) and high transient voltage blocking capacity. This allows for an excellent power dissipation, an improved current drive capacity and an improved control accuracy for various DC motor drive control applications.

Its superior performance is enhanced by its integrated gate protection circuitry, which offers superior protection from over-voltage, over-current and other electrical hazards. This circuit also prevents the transistor from going into avalanche mode during a large overdrive (push-pull) condition. As a result, the FQB9N50CTM offers superior protection against overvoltage, over-current and over-temperature conditions that can occur in motor drive applications.

The FQB9N50CTM has excellent thermal characteristics. Its construction material, silicon nitride, allows it to be used at higher temperatures and still maintain its excellent thermal properties. Such characteristics are important in motor applications that operate at high temperatures. This ensures that the FQB9N50CTM can be used in high-temperature operations while still delivering superior performance.

The FQB9N50CTM also features superior ESD protection, providing superior protection from high-energy transients. This feature also prevents accidental damage from ESD events. The integrated ESD protection also provides better reliability, improved yields, and fewer failure rates in the motor control systems.

Conclusion

In conclusion, the FQB9N50CTM is a highly efficient, low-cost transistor specially designed for high power applications. It can be used to control DC motor drives and other applications requiring ultra-low on-state resistance and superior dv/dt capabilities. It also features integrated gates protection and improved thermal characteristics. With its integrated protection circuitry, the FQB9N50CTM provides improved safety, safety and reliability for motor drive applications.

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