FQI50N06LTU

Vgs(th) (Max) @ Id:	2.5V @ 250µA
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package:	I2PAK (TO-262)
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	3.75W (Ta), 121W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1630pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	32nC @ 5V
Series:	QFET®
Rds On (Max) @ Id, Vgs:	21 mOhm @ 26.2A, 10V
Drive Voltage (Max Rds On, Min Rds On):	5V, 10V
Current - Continuous Drain (Id) @ 25°C:	52.4A (Tc)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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FQI50N06LTU Application Field and Working Principle

The FQI50N06LTU is one of the best power semiconductor devices available on the market today. It is a MOSFET device, meaning it has the highest power density, due to its higher capabilities. It is fabricated with a 40nm HV FinFET technology, which allows it to operate faster, cooler and with increased system efficiency. The FQI50N06LTU is an ideal choice for demanding applications including power converters, automotive systems and renewable energy systems.This device is based on a sophisticated ultra-low gate resistance FINFET HV process, which delivers an excellent thermal resistance and low gate charge. This device is an enhancement-mode power MOSFET and the application of gate voltage is necessary to create the low gate charge. The gate voltage range is from 1.5V to 12V, allowing it to be used in various power applications.The FQI50N06LTU comes with a package of dual-side cooling, allowing for maximum heat dissipation. The device also has an extremely low on-state resistance, which allows for improved system efficiency, extending the lifetime of the device. It has a high efficiency switch, especially at higher frequencies with improved, continuous current handling capabilities. Its drain-to-source breakdown voltage is 500V and its maximum drain-to-source on-state resistance is 59 mΩ, making it ideal for use in high power applications.The working principle of the FQI50N06LTU is known as the Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET). This device operates on the principle of a low voltage, small current transistor’s gate controlling a high current, large voltage drain-source junction. The source is connected to a voltage source and the drain is connected to a load connected to the other side of the source. When a voltage is applied to the gate, it modulates the current passing through the junction and is typically achieved by applying a voltage to the gate, which creates an electric field between the gate and the source. This electric field then influences the number of electrons and holes (positive charges) passing through the channel between the source and drain.The FQI50N06LTU has the capability to regulate large amount of power in a low gate voltage application. It is a reliable device with high-efficiency and high temperature stability. It provides an ideal alternative to traditional power switching solutions, making it the perfect choice for automotive and renewable energy applications.

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