FQI5N80TU

Vgs(th) (Max) @ Id:	5V @ 250µA
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package:	I2PAK (TO-262)
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	3.13W (Ta), 140W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1250pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	33nC @ 10V
Series:	QFET®
Rds On (Max) @ Id, Vgs:	2.6 Ohm @ 2.4A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	4.8A (Tc)
Drain to Source Voltage (Vdss):	800V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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?<p>FQI5N80TU is a transistor type which belongs to the Field Effect Transistors (FETs) family. The FQI5N80TU is a Single field effect transistor (MOSFET) that comes in TO-220 packaging and has a VDS (drain-source voltage) rating of 800V.</p><p>When talking about FQI5N80TU, it is important to understand the type of applications that it is most suitable for and its operating principle. The main applications that the FQI5N80TU semiconductor device can be used for are switching and amplification of signals.</p><p>The operating principle of an FQI5N80TU device is simple. In order to turn on the transistor, an electric field (gate voltage) is applied at the gate terminal of the device. This allows a current to pass through the semiconductor material, which in turn allows electrical current to flow from the source to the drain.</p><p>The source of the FQI5N80TU is the negative voltage terminal and the drain is the positive voltage terminal. In order for the FQI5N80TU to be used for signal amplification, the gate of the device must be connected to a signal source such as a radio frequency (RF) source.</p><p>When a signal is applied to the gate, the circuit impedance is reduced and the FQI5N80TU acts as an amplifier. As the voltage of the gate increases, the current flow through the device increases and this allows the FQI5N80TU to amplify the signal.</p><p>In addition to being used as an amplifier, the FQI5N80TU can also be used as a switch in order to control the amount of current that passes through the circuit. By applying a specific voltage to the gate, the current flowing through the device can be controlled. This allows the user to accurately control the amount of electrical current that is flowing through the circuit.</p><p>The FQI5N80TU is also able to handle high power levels with ease, making it ideal for circuits which require large amounts of current. Furthermore, this type of transistor is designed to be very reliable and can operate at high temperatures without any problems.</p><p>In conclusion, the FQI5N80TU is a versatile transistor which can be used for various applications such as amplifying signals, switching circuits and handling high power levels. The operating principle of the device is easy to understand and the device is reliable and can operate at high temperatures.</p>

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