Allicdata Part #: | FQI5N50CTU-ND |
Manufacturer Part#: |
FQI5N50CTU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 500V 5A I2PAK |
More Detail: | N-Channel 500V 5A (Tc) 73W (Tc) Through Hole I2PAK... |
DataSheet: | FQI5N50CTU Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | I2PAK (TO-262) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 73W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 625pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 24nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 1.4 Ohm @ 2.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 5A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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FQI5N50CTU Application Field and Working Principle
The FQI5N50CTU is a high power, voltage and current N-channel metal-oxide-semiconductor field-effect transistor (MOSFET) that has been designed for use in high-frequency applications. This transistor is typically used to control the switch of electrical systems, such as motor controllers and other electronic control devices. It is a single type of transistor, meaning it has two terminals, the source and drain, and a gate to control the flow of current.
This type of MOSFET is designed to be able to withstand and manage high frequency signals, which makes it an ideal choice for a variety of applications. It can be used in the control of relays, switching and mixing devices, semiconductor switches, inverters, DC-DC converters, amplifiers, and a wide range of DC power applications. This type of transistor is also extremely cost-effective and has a fast switching time, making it a popular choice for many applications.
FQI5N50CTU Working Principle
The FQI5N50CTU works on a principle known as the Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) mechanism. This mechanism is essentially a four-terminal electrostatic device that is composed of a layer of metal oxide on top of a silicon-based substrate, with two other terminals (the gate and the body). The FQI5N50CTU is an N-channel type of MOSFET, which means that it is capable of controlling a current flow that runs through the source and drains.
In a working circuit, current will flow through the transistor when there is a voltage difference between the source and drain. This voltage difference is controlled by the gate voltage, which will adjust the resistance between the source and drain to control the current flow. In this way, the FQI5N50CTU can be used to switch current on and off in an electrical circuit.
Other Benefits of the FQI5N50CTU
The FQI5N50CTU is an extremely efficient and reliable transistor. It is available at relatively low cost, making it an attractive option for high power applications. Additionally, the FQI5N50CTU is a very durable component with a long mean time between failures, making it ideally suited for high-frequency applications. Finally, the FQI5N50CTU has a high input impedance, making it an ideal component for voltage and current sensing systems.
Conclusion
The FQI5N50CTU is a high-frequency, N-channel MOSFET that is designed to be a reliable and cost-efficient alternative to other high power transistors. It can be used in a variety of applications, including motor controllers, relays, and DC power applications. Additionally, the FQI5N50CTU has a high input impedance, making it a good choice for voltage and current sensing systems. This FQI5N50CTU is a very reliable and efficient MOSFET that makes it a good choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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