FQI5N50CTU Allicdata Electronics
Allicdata Part #:

FQI5N50CTU-ND

Manufacturer Part#:

FQI5N50CTU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 500V 5A I2PAK
More Detail: N-Channel 500V 5A (Tc) 73W (Tc) Through Hole I2PAK...
DataSheet: FQI5N50CTU datasheetFQI5N50CTU Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: I2PAK (TO-262)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 73W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 625pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Series: QFET®
Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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FQI5N50CTU Application Field and Working Principle

The FQI5N50CTU is a high power, voltage and current N-channel metal-oxide-semiconductor field-effect transistor (MOSFET) that has been designed for use in high-frequency applications. This transistor is typically used to control the switch of electrical systems, such as motor controllers and other electronic control devices. It is a single type of transistor, meaning it has two terminals, the source and drain, and a gate to control the flow of current.

This type of MOSFET is designed to be able to withstand and manage high frequency signals, which makes it an ideal choice for a variety of applications. It can be used in the control of relays, switching and mixing devices, semiconductor switches, inverters, DC-DC converters, amplifiers, and a wide range of DC power applications. This type of transistor is also extremely cost-effective and has a fast switching time, making it a popular choice for many applications.

FQI5N50CTU Working Principle

The FQI5N50CTU works on a principle known as the Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) mechanism. This mechanism is essentially a four-terminal electrostatic device that is composed of a layer of metal oxide on top of a silicon-based substrate, with two other terminals (the gate and the body). The FQI5N50CTU is an N-channel type of MOSFET, which means that it is capable of controlling a current flow that runs through the source and drains.

In a working circuit, current will flow through the transistor when there is a voltage difference between the source and drain. This voltage difference is controlled by the gate voltage, which will adjust the resistance between the source and drain to control the current flow. In this way, the FQI5N50CTU can be used to switch current on and off in an electrical circuit.

Other Benefits of the FQI5N50CTU

The FQI5N50CTU is an extremely efficient and reliable transistor. It is available at relatively low cost, making it an attractive option for high power applications. Additionally, the FQI5N50CTU is a very durable component with a long mean time between failures, making it ideally suited for high-frequency applications. Finally, the FQI5N50CTU has a high input impedance, making it an ideal component for voltage and current sensing systems.

Conclusion

The FQI5N50CTU is a high-frequency, N-channel MOSFET that is designed to be a reliable and cost-efficient alternative to other high power transistors. It can be used in a variety of applications, including motor controllers, relays, and DC power applications. Additionally, the FQI5N50CTU has a high input impedance, making it a good choice for voltage and current sensing systems. This FQI5N50CTU is a very reliable and efficient MOSFET that makes it a good choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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