FQI50N06TU Allicdata Electronics
Allicdata Part #:

FQI50N06TU-ND

Manufacturer Part#:

FQI50N06TU

Price: $ 1.27
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 60V 50A I2PAK
More Detail: N-Channel 60V 50A (Tc) 3.75W (Ta), 120W (Tc) Throu...
DataSheet: FQI50N06TU datasheetFQI50N06TU Datasheet/PDF
Quantity: 957
1 +: $ 1.15920
10 +: $ 1.04769
100 +: $ 0.84181
500 +: $ 0.65473
1000 +: $ 0.54249
Stock 957Can Ship Immediately
$ 1.27
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: I2PAK (TO-262)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.75W (Ta), 120W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1540pF @ 25V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Series: QFET®
Rds On (Max) @ Id, Vgs: 22 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The FQI50N06TU is a low-power, logic-level enhancement-mode Metal-oxide-semiconductor Field-effect Transistor (MOSFET). It is commonly used in digital circuits and is an integral part of everyday electronics. This FET device is specifically designed to switch low-level signals and can be used to provide logic functions in digital circuits, such as logic gates, memory circuits, analog amplifiers, and other applications. FQI50N06TU is a 50V, 0.6A device with a threshold voltage of 1.3V.

Overview of Operation

A FQI50N06TU transistor comprises two distinct MOS transistors. When an input voltage is applied to the gate of the FQI50N06TU, it creates a channel that carries a current from the source to the drain. The input signal is then amplified by the gate capacitance, which is then output from the drain. The power gain of the FQI50N06TU is determined by the ratio of the drain-source current divided by the gate-source current. The input signal being amplified is called a gate bias current. Additionally, the body bias current is also used to adjust the drain-source current.

Advantages of FQI50N06TU

The primary benefit of FQI50N06TU is its low power consumption and high efficiency, making them ideal for use in portable electronics and other digital devices. Additionally, these FETs are compact and easy to integrate into existing circuits. Additionally, the FQI50N06TU is highly reliable and offers very low on-resistance levels (R DS(on)). This low resistance makes the FQI50N06TU ideal for providing high levels of current to circuits.

Applications

The FQI50N06TU is commonly used in logic gates, memory circuits, analog amplifiers, and other similar applications. It is also used in power-on reset circuits, voltage regulators, and in high frequency switching circuits. Additionally, the FQI50N06TU is often used in amplifiers, with its high efficiency making it extremely useful for improving the performance of analog circuits. The FQI50N06TU is also suited for use in motor controllers, as well as audio and video signal processing devices.

Conclusion

The FQI50N06TU is a low-power, logic-level enhancement-mode MOSFET. Its primary benefit is its low power consumption and high efficiency, making it ideal for use in portable electronics and other digital devices. Additionally, it is highly reliable and offers very low on-resistance levels (R DS(on)). This device is commonly used in logic gates, memory circuits, analog amplifiers, voltage regulators, power-on reset circuits and high frequency switching circuits.

The specific data is subject to PDF, and the above content is for reference

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