Allicdata Part #: | FQI5N20TU-ND |
Manufacturer Part#: |
FQI5N20TU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 200V 4.5A I2PAK |
More Detail: | N-Channel 200V 4.5A (Tc) 3.13W (Ta), 52W (Tc) Thro... |
DataSheet: | FQI5N20TU Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | I2PAK (TO-262) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.13W (Ta), 52W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 270pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 7.5nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 1.2 Ohm @ 2.25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4.5A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The FQI5N20TU is a type of field effect transistor (FET). It is a single, enhancement-mode field-effect transistor with a thickness of 1.2µm and a current of 2A. It is an N-channel MOSFET, which is a type of FET, and is part of a long line of FQI single FETs by International Rectifier.
The FQI5N20TU application field has quite a few uses, ranging from automotive electronics components to industrial and consumer devices. Its biggest practical use is in applications where a high speed switching is needed, such as in power and audio amplifiers, or in pulse generation.
It is also used in audio and video switching circuits, as well as in particle accelerators, microwave relay systems, linear power regulators, and power switching applications. Overall, it is an efficient and reliable solution to many types of electronics applications.
The working principle of the FQI5N20TU is quite simple. It uses a channel of semiconductor material, such as silicon, and a “gate” to control the flow of current through the channel. When a positive voltage is applied to the gate, a thin conducting channel, or inversion layer, forms between the source and the drain, enabling current to flow from the source to the drain. When the voltage is removed, the channel is disrupted, and the current flow is stopped.
The FQI5N20TU is the perfect device for applications that require extremely fast switching and high power capacity. Its 1.2µm thickness makes it considerably smaller than other FETs, and its 2A current makes it capable of handling large currents as well. It is easy to use, as its threshold voltage is fixed. It is also quite reliable, allowing it to be used in a variety of applications.
In short, the FQI5N20TU is perfect for applications that require fast, reliable switching while providing high power capacity. Its advantages include its small size, high current rating, and fixed threshold voltage. It is an ideal choice for a variety of electronics projects, and is sure to enhance any system it is used in.
The specific data is subject to PDF, and the above content is for reference
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