Allicdata Part #: | FQI5N40TU-ND |
Manufacturer Part#: |
FQI5N40TU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 400V 4.5A I2PAK |
More Detail: | N-Channel 400V 4.5A (Tc) 3.13W (Ta), 70W (Tc) Thro... |
DataSheet: | FQI5N40TU Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | I2PAK (TO-262) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.13W (Ta), 70W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 460pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 1.6 Ohm @ 2.25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4.5A (Tc) |
Drain to Source Voltage (Vdss): | 400V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The FQI5N40TU is a part of the FQI2N/FQI5N40TU family of N-channel enhancement mode Field Effect Transistors (FET) which are made using the latest high-voltage MOSFET process technology. It operates in medium to low voltage circuits and provides significantly higher switching performance due to its unique structure.
This FQI5N40TU device is a single N-channel enhancement mode Field Effect Transistor, available in TO-220 packaging and is capable of providing reliable performance in medium to low voltage ranges. The drain is the primary output pin connection, and source is the second output pin connection. It also has a gate pin which is the input for controlling the conduction in the channel. The drain-source junction is protected by diode connected between the drain and source pins which helps in preventing any reverse bias current.
The main applications of FQI5N40TU are switch mode power supplies, DC to DC converters, relay drivers and power supply control. It is highly accepted in these applications due to its unique features like low on-resistance, high switching speed, temperature stability, low profile and high reliability.
The working principle of FQI5N40TU is the same for any other N-channel enhancement mode Field Effect Transistor. It works on the concept of varying the resistance between the source and drain terminals with respect to the voltage applied to the gate terminal. When the voltage is applied to the gate terminal, the gate-drain capacitance increases, which further increases the resistance between the drain and source terminals. As resistance increases, drain current decreases and eventually when the resistance becomes enough, no current is passed through the transistor.
In order to switch on this device, the voltage applied to the gate terminal should be greater than the threshold voltage to make the conductive channel in the substrate. As the device is an N-channel MOSFET, the source terminal should always be connected to the ground for proper operation.
In a practical application, FQI5N40TU can be used in a buck converter as a switch. In buck converter application, FQI5N40TU acts as a switching device which is used to switch the output voltage. It is connected between the power supply and the load. When the voltage is applied to the gate terminal, the voltage across the output of the power supply is divided and only the desired output is propagated to the load. The typical drain current of this device is 40A and its maximum drain-source voltage can go up to 500V.
The FQI5N40TU device has many advantages such as high switching speed, low thermal resistance, low profile, high current capability and low on-resistance. It is highly reliable and temperature stable device which makes it a great choice for switch mode power supplies, DC to DC converters and many other applications.
The specific data is subject to PDF, and the above content is for reference
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