IPA60R099P6XKSA1 Allicdata Electronics
Allicdata Part #:

IPA60R099P6XKSA1-ND

Manufacturer Part#:

IPA60R099P6XKSA1

Price: $ 3.92
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 600V TO220FP-3
More Detail: N-Channel 600V 37.9A (Tc) 34W (Tc) Through Hole PG...
DataSheet: IPA60R099P6XKSA1 datasheetIPA60R099P6XKSA1 Datasheet/PDF
Quantity: 1000
1 +: $ 3.91860
10 +: $ 3.80104
100 +: $ 3.72267
1000 +: $ 3.64430
10000 +: $ 3.52674
Stock 1000Can Ship Immediately
$ 3.92
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 1.21mA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: PG-TO-220-FP
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 34W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3330pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Series: CoolMOS™ P6
Rds On (Max) @ Id, Vgs: 99 mOhm @ 14.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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AIP60R099P6XKSA1 is a common field effect transistor. The abbreviation FET stands for field effect transistor, and is a type of transistor used to manipulate or switch current primarily in circuits. This device is a type of FET known as a MOSFET (metal oxide semiconductor field-effect transistor), which are specialized types of transistors. The AIP60R099P6XKSA1 is a single FET, which means that it is composed of a single transistor unit that is divided into its three terminals, the gate terminal, source terminal, and drain terminal.

The AIP60R099P6XKSA1 is typically used in applications where high-speed switching or very low distortion circuit behavior is required. Some common applications involve power amplifiers or other circuits where the characteristics of the MOSFET are preferable. Highly linear audio amplifiers are a particularly common application of the MOSFET. This is because the effective output impedance of the FET is almost constant versus frequency over a wide range, making it a good choice for high quality audio amplifiers.

In terms of operation, the primary purpose of the AIP60R099P6XKSA1 is to control current. When the gate voltage is increased above a certain threshold, the FET begins to conduct, allowing current from the source terminal to flow through to the drain terminal. With lower gate voltages, the FET remains off and no current will flow through it. The operation of the device relies on the properties of the metal oxide that forms the source and drain terminals of the FET. When the gate voltage is increased above the threshold, the voltage is used to pull electrons away from the metal oxide, resulting in a change in the conductivity of the source and drain terminals.

Due to the properties of the metal oxide and the construction of the FET, this type of component is noise immune, meaning that the output will remain at a predictable level, even when influenced by outside noise sources. This is a valuable property for digital switching applications, where the stability of the output has to remain constant even in harsh environment.

In conclusion, the AIP60R099P6XKSA1 is a type of single FET that is commonly used in applications where high-speed switching or low distortion behavior is needed, such as power amplifiers or audio equipment. The FET is capable of controlling current by applying gate voltage to its source and drain terminals, and it is able to maintain a stable output, even in the presence of noise.

The specific data is subject to PDF, and the above content is for reference

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