IPA65R150CFDXKSA1

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IPA65R150CFDXKSA1 is a high power handling single-gate field effect transistor (FET) manufactured by IXYS Corporation.

This power FET is an outgrowth of the popular single-gate IRF3710 found in various popular battery – operated computer applications such as the BlackBerry and iPhone. It is particularly suited for use with high-frequency switching applications and is capable of operating with load currents up to 150A.

The power FET is available in a TO-247AC or TO-252AA package and has an SO-14 outline. It is made from silicon material and has a dielectric breakdown voltage rating of 100V, with a maximum junction temperature of 175°C. The device has a maximum drain-source on-state resistance of 8.4 mΩ and a gate-source breakdown voltage of 11V.

The main application fields of this FET are in power control and switching, high-speed switching, and audio amplifier circuits. It has a wide range of use for power efficient designs in consumer, industrial, and computing & communication application. This means that it can be used in a variety of applications where flexibility, accuracy, and high performance are key.

The working principle behind the single-gate FET is based on the electrostatic force created between the gate and the SO-14 substrate. When a voltage is applied to the gate, the electrostatic force between the gate (source) and the SO-14 substrate (drain) generates a current through the FET which controls the transistor in a manner similar to that of a triode vaccum tube when a voltage is applied to the gate material.

The single-gate FET has higher levels of performance, more efficiency, and greater power handling capacity than its bipolar counterparts, making it ideal for applications requiring a high level of performance with minimal power dissipation. They are also used in high-frequency switching applications as well as Class D audio amplifiers.

The IPA65R150CFDXKSA1 is a high-current, high-power single-gate FET created by IXYS Corporation which finds application in numerous areas. Its main application fields involve power control and switching, high-speed switching, and audio amplifier circuits. The working principle of this power FET is based on the electrostatic force between the gate and the SO-14 substrate. This FET is highly efficient and has a high transistor power handling capacity, even compared to its bipolar counterparts.

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