IPA60R190P6XKSA1 Allicdata Electronics
Allicdata Part #:

IPA60R190P6XKSA1-ND

Manufacturer Part#:

IPA60R190P6XKSA1

Price: $ 2.22
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 600V 9.5A TO220-FP
More Detail: N-Channel 600V 20.2A (Tc) 34W (Tc) Through Hole PG...
DataSheet: IPA60R190P6XKSA1 datasheetIPA60R190P6XKSA1 Datasheet/PDF
Quantity: 1000
1 +: $ 2.22000
10 +: $ 2.15340
100 +: $ 2.10900
1000 +: $ 2.06460
10000 +: $ 1.99800
Stock 1000Can Ship Immediately
$ 2.22
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 630µ
Package / Case: TO-220-3 Full Pack
Supplier Device Package: PG-TO-220-FP
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 34W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
Series: CoolMOS™ P6
Rds On (Max) @ Id, Vgs: 190 mOhm @ 7.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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IPA60R190P6XKSA1 is a single P-Channel metal oxide semiconductor field-effect transistor (MOSFET) device manufactured by Infineon Technologies. The device is a six-pin power integrated circuit, which exhibits excellent performance in various applications.

Applications

IPA60R190P6XKSA1 is mainly used in switching circuits, where it acts as a switch opening or closing upon the input signal applied. Some of the applications specifically benefiting from the device include:

  • DC/DC Converters
  • Motor Drive Circuits
  • IR Remote Control Power Switches, and
  • Battery Powered On/Off Switches.

Furthermore, IPA60R190P6XKSA1 has also been successfully used in a range of audio applications, from speaker protection circuits, pre-amplifiers, and receivers, to stereo headset amplifiers.

Working Principle

IPA60R190P6XKSA1 is based on the principle of field-effect transistor (FET) technology. It is made up of two regions: the drain-source region, which carries the load current, and the gate region, which senses the input voltage. The drain-source region is made of doped material and is connected to a lead called the source. The gate region is composed of an insulated metallic electrode. An electrical field between the source and gate allows the transistor to act as a switch.

When the input voltage to the gate region exceeds certain threshold voltage, the electric field generated between the source and gate cause the device to enter the "on" state. This causes the current to flow from the drain towards the source and the device is said to be "on". Conversely, if the voltage on the gate is not higher than the threshold voltage, the electric field will be insufficient to allow current through the device, and it is said to be "off".

Conclusion

IPA60R190P6XKSA1 is a power MOSFET device with excellent performance, primarily employed in switching, DC/DC convertor, and audio applications. The device follows the fundamental operating principle of field-effect transistor technology, with the source and gate forming a dynamic electric field, allowing the device to act as a switch depending on the input signal.

The specific data is subject to PDF, and the above content is for reference

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