IPA65R420CFDXKSA1

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Transistors - FETs, MOSFETs - Single

The IPA65R420CFDXKSA1 is a type of transistor which belongs to the family of FETs and MOSFETs, more specifically to the single type of transistors. It is a power MOSFET transistor, primarily used for applications that require high switching speeds and high breakdown voltage capability.

The device is able to work over a wide range of temperatures and at high frequency levels, ensuring a reliable performance. The integrated protective Zener diode is the source of the high sustained voltage in the application, offering more flexibility and accuracy in the device’s behaviour even with wide temperature variations.

The IPA65R420CFDXKSA1 is especially suitable for many types of applications operating with high amounts of voltage and/or temperature changes, such as power supply architectures, intelligent rechargeable battery systems, automotive electronics, as well as many other switching applications including frequency converters.

The working principle of the IPA65R420CFDXKSA1 is based on the effects of a voltage applied to the dashed gate electrode. The presence of such voltage determines a region on the surface of the MOS-cap to be inversion-layer-connected to the source. As this layer grows and contracts, so does the conductivity of the channel, affecting the drain current flowing through the device.

The phenomenon is tuned by controlling the voltage applied to the gate terminal which is responsible for the fast-switching characteristics of the device. This way the electric current is transported from the source terminal to the drain terminal; the amount of current depends on the device\'s on-state resistance and the minimum amount of voltage between the source and the drain terminal.

In normal operation, the current transport is analogous to the flow of electric current through a closed-gate FET, meaning that its electric field distribution is not affected by induced electric charges within the body. Unlike JFETs, the electric field within the body regions of the IPA65R420CFDXKSA1 has no control over the current flow, making it unique within the family of MOSFETs.

The presence of a low input capacitance and excellent dV/dt behaviour add flexibility to the device, enhancing the performance of the application over a wide range of temperatures. Furthermore the high output current capability of the IPA65R420CFDXKSA1 allows for higher power consumption covering from ~100W to more than 200W.

That makes the IPA65R420CFDXKSA1 transistor a great solution for a wide range of switching applications operating in different conditions. The absence of temperature dependent parasitic capacitance makes the device excellent for portable applications, as this attribute provides a more consistent performance across all temperature ranges.

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