IPA60R600C6XKSA1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IPA60R600C6XKSA1 is a single N-Channel Enhancement-Mode Field Effect Transistor (FET). It is designed primarily to work in high breakdown voltage, high speed switching and low-power dissipation applications. With its convenient gate and drain voltage control, the N-channel MOSFETs are used in high-speed/high-frequency linear/switching power applications, including power control, secondary side protection, high-voltage imaging and many other applications.

The IPA60R600C6XKSA1 FET is offered in a TO-220 package. This package is mainly used for high voltage FETs because it\'s better cooling performance. The general specifications of this FET are as follows:

• Voltage: 600V
• Gate-Source Voltage: 60 VGS
• Maximum Drain Current: 37A
• Drain-Source On-state Resistance: 11.3 mohm
• Turn-on Delay Time: 5 ns
• Rise Time: 12 ns
• Power Dissipation: 280 mW

The working principle of IPA60R600C6XKSA1 FET is based on the Gate Control Effect of a reverse-biased diode. When a negative voltage is applied to the Gate, it reduces the number of electrons in the channel between the Drain and Source and no current can flow through the transistor. The transistor is "OFF" when it\'s in this state. This is called the "Depletion Mode".

When a positive voltage is applied to the Gate and the reverse-biased diode is forward biased, it increases the number of electrons in the channel and current can flow through the transistor. This is called the "Enhancement Mode" and the transistor is "ON" when it\'s in this state. By controlling the amount of current supplied, the characteristics of the FET can be changed accordingly.

IPA60R600C6XKSA1 FETs have wide applications in high speed switchings such as motor control, power control, inverter circuits, motor control systems, switching power supply, LED lighting and other high-voltage applications. The FETs are also ideal for high-frequency low-power dissipation applications, such as in radio transmitter and receiver circuits and in digital circuits, where high-speed switching is essential for the sake of the signal quality.

It is also ideally suited for high-performance laser diode drive circuitry, because of its ultra-low gate-charge and its inherent fast switching speed. The IPA60R600C6XKSA1 is also suitable for secondary side protection as it can detect a fault and immediately switch off, preventing any further damage.

Overall, the IPA60R600C6XKSA1 is a great choice for any application requiring high-voltage, high-speed switching and low-power dissipation. It offers the user a wide range of benefits, such as low gate-charge, fast switching speed, high breakdown voltage and low on-resistance.

The specific data is subject to PDF, and the above content is for reference