IPA60R800CEXKSA1

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The IPA60R800CEXKSA1 is an enhancement-mode power field effect transistor (FET) that is built on the gallium-nitride (GaN) on silicon-carbide (SiC) power topology. This FET is extremely reliable due to its high-performance materials and innovative construction. Additionally, it offers a wide range of operation voltages, currents, and gate-source voltages. This make it suitable for many applications where devices with high current and/or high efficiency are required.

Application Field

The high-speed switching ability and low gate-source capacitance of the IPA60R800CEXKSA1 makes it ideal for automotive, power electronics, and renewable energy industries. For example, in the automotive industry, the transistor is used in high-voltage and high-current switching applications such as electronic power steering and electronic-locking differential applications. Additionally, the GaN-on-SiC technology used in the device enables improved efficiency, power density, and system size in electric vehicle inverters, DC/DC converters, motor drives, and isolated power supply circuitry. Lastly, the device is also used in renewable-energy applications such as photovoltaic grid-tied inverters, solar microinverters, switch-mode battery chargers, and wind turbine drives.

Work Principle

The IPA60R800CEXKSA1 is an enhancement-mode FET, meaning it is normally off and needs an external gate voltage (VGS) to turn on. The power is transferred between the source and drain using the “channel” created with the gate-induced charge. This can be described as the source and drain being connected by a thin layer of conducting material, the “channel,” when a voltage is applied across the gate and source of the transistor. As the gate-source voltage increases, the channel is “turned on,” allowing electric current to flow between the source and the drain. This process is often referred to as the “pinch-off” voltage, where an electric field is created between the source and the gate, which “closes off” the channel.

When the transistor is off, or ungated, current does not flow between the source and drain. This is because the source-to-drain path is blocked by a thin layer of insulating material, referred to as a depletion layer. The maximum current that can flow through the transistor before it begins to experience large voltage drops is defined as the “Saturation” level. This can be increased by raising the gate-source voltage, or VGS, or decreasing the source resistance, or RDS.

In conclusion, the IPA60R800CEXKSA1 is a high-performance GaN-on-SiC FET suitable for many high-current and high-efficiency applications. It is an enhancement-mode power FET where the channel is opened and closed with a gate-source voltage, and the maximum current that can flow through the transistor is determined by the saturation level.

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