Allicdata Part #: | IPC022N03L3X1SA1-ND |
Manufacturer Part#: |
IPC022N03L3X1SA1 |
Price: | $ 0.18 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 1A SAWN ON FOIL |
More Detail: | N-Channel 30V 1A (Tj) Surface Mount Sawn on foil |
DataSheet: | IPC022N03L3X1SA1 Datasheet/PDF |
Quantity: | 1000 |
64365 +: | $ 0.15550 |
Series: | OptiMOS™ |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 1A (Tj) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 50 mOhm @ 2A, 10V |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Vgs (Max): | -- |
FET Feature: | -- |
Power Dissipation (Max): | -- |
Operating Temperature: | -- |
Mounting Type: | Surface Mount |
Supplier Device Package: | Sawn on foil |
Package / Case: | Die |
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The IPC022N03L3X1SA1 is a single-junction MOSFET (metal–oxide–semiconductor field-effect transistor) and is used for a number of different applications. The device can operate at very high frequency and is capable of handling high voltages and high current.
MOSFETs, as with other transistors, typically consist of two primary regions of semiconductor material – one of which is doped with an impurity such as silicon, and the other is composed of either aluminum or indium (depending upon the device). These two planes are separated by a thin insulating layer, commonly referred to as the \'gate dielectric\'. In this way, the electrical current is allowed to flow between the two regions of the MOSFET when a given amount of electrical charge is applied to the gate electrode. The current flow is then controlled by the amount of charge placed on the gate, which is known as the transistor effect.
The primary function of the IPC022N03L3X1SA1 is to control the flow of electrical current between two points. This is done by applying a voltage to the gate electrode. The source and drain of the MOSFET are then connected to the two regions of the semiconductor material, allowing the transistor effect to occur. As the amount of gate voltage applied increases, the current flow between the regions also increases. The IPC022N03L3X1SA1 also offers protection against over-voltages, allowing for safe operation of electrical circuits.
The IPC022N03L3X1SA1 is capable of operating at very high frequencies and voltage levels. This allows it to be used for a variety of applications, such as switching and power control, signal processing, and in radio frequency (RF) circuits. Additionally, it can be used in combination with other MOSFETs to create digital circuits that are capable of operating at very high speeds without overheating.
Another advantage of the IPC022N03L3X1SA1 is that it is capable of handling high currents. This makes it ideal for using in power applications, like motor controls or power supplies, as the MOSFET can handle large amounts of current without overheating. By using the IPC022N03L3X1SA1, manufacturers are able to reduce the size of their power systems, as well as reduce the amount of power needed to operate them.
Overall, the IPC022N03L3X1SA1 is a versatile MOSFET that can be used in a variety of applications. It is capable of higher frequency operation, providing protection against over-voltages. Additionally, it can handle large amounts of current, making it ideal for power applications. Its combination of features and performance make it an ideal choice for engineers looking to use a single-junction MOSFET in their designs.
The specific data is subject to PDF, and the above content is for reference
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