Allicdata Part #: | IPC055N03L3X1SA1-ND |
Manufacturer Part#: |
IPC055N03L3X1SA1 |
Price: | $ 0.35 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 1A SAWN ON FOIL |
More Detail: | N-Channel 30V 1A (Tj) Surface Mount Sawn on foil |
DataSheet: | IPC055N03L3X1SA1 Datasheet/PDF |
Quantity: | 1000 |
25450 +: | $ 0.31964 |
Series: | OptiMOS™ |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 1A (Tj) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 50 mOhm @ 2A, 10V |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Vgs (Max): | -- |
FET Feature: | -- |
Power Dissipation (Max): | -- |
Operating Temperature: | -- |
Mounting Type: | Surface Mount |
Supplier Device Package: | Sawn on foil |
Package / Case: | Die |
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An IPC055N03L3X1SA1 is a type of field effect transistor (FET). FETS are used as amplifying or switching devices. This particular transistor is a single N-channel MOSFET, which means there is one P component and one N component on the same chip. It is primarily used in consumer and industrial digital signal processing (DSP) applications.
MOSFETs have a unique operating principle compared to traditional BJTs (bipolar junction transistors). BJTs have three terminals (base, collector, and emitter) and operate by altering the base voltage in order to control the current through the collector-emitter junction. MOSFETs, on the other hand, have four terminals (gate, drain, source, and body) and operate by varying the electric field strength across the gate-drain and gate-source junctions. This electric field strength is controlled by the applied voltage between the gate and source electrodes.
The IPC055N03L3X1SA1 has an operating voltage range of 0 to 3.3 volts, which makes it suitable for low power applications. Additionally, its drain-source breakdown voltage is specified at 11 volts, with a channel current of 55mA. It can accommodate a maximum channel temperature of 175 degrees Celsius and has a threshold voltage of 1.8 volts. All of these features make it suitable for use in a wide variety of DSP applications such as audio amplification, video encoding, and digital signal processing.
The IPC055N03L3X1SA1 is suitable for use in analog circuits where high speed operation is required. Additionally, it has excellent noise immunity and EMI characteristics, making it suitable for high reliability digital circuits. It is also suitable for power switching applications such as DC-DC converters, where pulse width modulation (PWM) is used to control the output power.
In conclusion, the IPC055N03L3X1SA1 is a single N-channel MOSFET suitable for use in a wide variety of applications. Its features include a wide operating voltage range, high drain-source breakdown voltage and excellent noise and EMI characteristics. Additionally, it is suitable for use in analog circuits where high speed operation is required, as well as power switching applications where PWM is used to control the output power. These features make it a versatile and reliable choice for digital signal processing applications.
The specific data is subject to PDF, and the above content is for reference
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