IPC028N03L3X1SA1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IPC028N03L3X1SA1 is an aggregate of three transistors in one package, specifically an insulated-gate field-effect transistors (IGFETs) or metal-oxide-semiconductor field-effect transistors (MOSFETs). It is the most widely used application of semiconductor technology. It is an extremely versatile type of transistor that is widely utilized for switching and amplification purposes. As such, it is a very popular choice for a wide range of applications requiring efficient power management and high-performance.

IPC028N03L3X1SA1 is a single MOSFET or IGFET, as it is also referred to, packaged in a plastic encapsulated module with a lead type of SOT-223. It has a drain-source mean on-state resistance (Rdson) of 2.3 ohms, a gate-source threshold voltage of 1.0 volts and a gate-source leakage current of 1.0 microamps. Additionally, it has a maximum drain-source breakdown voltage of 500 volts, a maximum drain-current rating of 28 amps, an operating temperature range of -55 °C to +150 °C and a total power rating of 396 watts.

The working principle of a MOSFET is relatively straightforward. A metal-oxide semiconductor is specifically engineered to create an insulated barrier between two electrodes when a voltage is applied to the gate. When a voltage is applied between the source and the drain, current will flow from the source to the drain, if the voltage applied to the gate exceeds the threshold voltage. The current is proportional to the voltage applied to the gate, making MOSFETs useful for amplifying signals that can be controlled with the gate voltage.

The IPC028N03L3X1SA1 is designed for use in switching, linear and logic circuit applications. It is commonly used in switch mode power supplies, automotive power systems, security systems and lighting fixtures. Its high current handling, low on-resistance and high voltage ratings make it suitable for use in power systems and applications requiring efficient power management. Its low gate leakage current and high switching speed make it suitable for use in logic circuits, such as digital logic gates and microprocessors.

In summary, the IPC028N03L3X1SA1 is a single MOSFET, packaged in a plastic extracted module with a lead type of SOT-223. It has an on-state resistance of 2.3 ohms, a gate-source threshold voltage of 1.0 volts and a gate-source leakage current of 1.0 microamps. It has a maximum drain-source breakdown voltage of 500 volts and a maximum drain-current rating of 28 amps. It is suitable for use in switching, linear and logic circuit applications due to its high current handling, low on-resistance, high voltage ratings, low gate leakage current and high switching speed.

The specific data is subject to PDF, and the above content is for reference