IPC100N04S51R2ATMA1 Allicdata Electronics
Allicdata Part #:

IPC100N04S51R2ATMA1TR-ND

Manufacturer Part#:

IPC100N04S51R2ATMA1

Price: $ 0.67
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 40V 100A 8TDSON
More Detail: N-Channel 40V 100A (Tc) 150W (Tc) Surface Mount PG...
DataSheet: IPC100N04S51R2ATMA1 datasheetIPC100N04S51R2ATMA1 Datasheet/PDF
Quantity: 1000
1 +: $ 0.67000
10 +: $ 0.64990
100 +: $ 0.63650
1000 +: $ 0.62310
10000 +: $ 0.60300
Stock 1000Can Ship Immediately
$ 0.67
Specifications
Vgs(th) (Max) @ Id: 3.4V @ 90µA
Package / Case: 8-PowerTDFN
Supplier Device Package: PG-TDSON-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 150W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 7650pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 131nC @ 10V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 1.2 mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The IPC100N04S51R2ATMA1 is a planar, enhanced-performance, N-channel, enhancement-mode field-effect transistor (FETs). Originally designed as a logic level gate-drive transistor, it is capable of switching currents of up to 55 A with a very fast rise and fall times. It is highly suitable for various applications such as motor control, high-speed switching, power management and many more.

The IPC100N04S51R2ATMA1 has a breakdown voltage of 100 V and a drainsource on resistance of 0.35 m&Omegma;@ 10 V. Its gate drive requirements are low, which ensures an easily controlled on or off operation. The commonly used gate sources for this device are 2.5 V and 5 V. The device exhibits a very fast timing characteristic with a turn-off delay time of 40 ns and a turn-on delay time of 80 ns.

The IPC100N04S51R2ATMA1 consists of two I-shaped resistors connected in series and stacked in a parallel configuration. The IPC100N04S51R2ATMA1 transistors are generally used to connect or disconnect a load to a power source. It is also used in voltage and current limiting applications. It is also used for controlling the amount and direction of the current flow in circuits.

The working principle of IPC100N04S51R2ATMA1 lies in the charging/discharging of these two I-shaped resistors. When voltage is applied at the input terminal of the FET, it creates an electric field which moves free electrons, creating a conducting path between the drain and the source. This opposite current, however, flows in the opposite direction that was intended. This is known as a reverse biasing.

The IPC100N04S51R2ATMA1 is the ideal solution for high-speed switching and motor control applications due to its high current-handling capability and very fast switching times. It has a low gate drive, which makes it suitable for applications such as power management and voltage/current limiting.

The IPC100N04S51R2ATMA1’s two I-shaped resistors ensure that the device operates in enhancement mode. This mode offers better control of the voltage and current levels, making it suitable for applications that require very accurate control. It has a low gate-to-drain capacitance and a low threshold voltage, which enables it to switch signals in a wide range of frequencies.

With its rapid rise and fall times and its high current-handling capability, the IPC100N04S51R2ATMA1 is ideally suited for use in applications such as motor control and power management. Its low gate leakage current and its low forward voltage drop are additional benefits. Its versatile nature makes it ideal for use in a variety of applications including high-speed switching, power management and voltage/current limiting.

The specific data is subject to PDF, and the above content is for reference

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