![IPC100N04S5L1R1ATMA1 Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
IPC100N04S5L1R1ATMA1 Discrete Semiconductor Products |
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Allicdata Part #: | IPC100N04S5L1R1ATMA1TR-ND |
Manufacturer Part#: |
IPC100N04S5L1R1ATMA1 |
Price: | $ 0.67 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | N-CHANNEL_30/40V |
More Detail: | N-Channel 40V 100A (Tc) 150W (Tc) Surface Mount PG... |
DataSheet: | ![]() |
Quantity: | 1000 |
5000 +: | $ 0.61211 |
Vgs(th) (Max) @ Id: | 2V @ 90µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | PG-TDSON-8-34 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 150W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 8250pF @ 25V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 140nC @ 10V |
Series: | Automotive, AEC-Q101, OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 1.1 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The IPC100N04S5L1R1ATMA1 is a type of field-effect transistor (FET) known as a metal oxide semiconductor field effect transistor (MOSFET). It belongs to a category of single FETs, which means the transistor has a single gate connection.
A FET is an electronic switch that can control the flow of electrical current within a circuit. It works similarly to an electrolytic capacitor: when the gate is opened, current is allowed to pass between the source and drain of the device. The IPC100N04S5L1R1ATMA1 uses MOS technology to improve power efficiency and reduce power consumption.
The IPC100N04S5L1R1ATMA1 has a range of applications and can be used in anything from analog signal processing to digital logic and advanced robotics. It is often used in low-power applications such as switch-mode power supplies and the control circuitry of motor controllers. It can also be used in audio amplifiers, power converters, and motor control applications.
The working principle of the IPC100N04S5L1R1ATMA1 is based on the fact that FETs operate on the principle of electric field effect. An electric field is created between the gate and the source of the transistor when a voltage is applied to the gate. This electric field causes the gate to attract electrons from the source and drain of the device, thus creating a conducting channel between the source and drain.
When a voltage is applied to the gate, current will flow from the source to the drain, and the current flow can be controlled by varying the gate voltage. The current flow is inverse proportional to the gate voltage, which means the higher the gate voltage, the less current will flow. This electric field effect makes FETs an especially efficient device for low-power applications.
By changing the gate voltage, the IPC100N04S5L1R1ATMA1 can be used to precisely control the current flowing through it. This allows it to be used in a variety of applications, such as providing the necessary drive current for the gate of a low power MOSFET or to provide the switching voltage required for pulse width modulated circuits. It can also be used in logic circuits, audio amplifiers, and robotics.
In summary, the IPC100N04S5L1R1ATMA1 is a single-gate FET that has a wide range of applications. It operates on the principle of electric field effect, allowing it to be used to precisely control the current flowing through it. It is commonly used in low-power applications, such as switch-mode power supplies, motor controllers, audio amplifiers, and robotics.
The specific data is subject to PDF, and the above content is for reference
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