IPC100N04S51R9ATMA1 Discrete Semiconductor Products

The IPC100N04S51R9ATMA1 is a N-channel enhancement mode MOSFET that is commonly used in high-frequency applications. It has a small footprint, low on-resistance, is fast switching, and is designed for ruggedness. It is packaged in a small surface-mount FLGA package with low thermal impedance and high reliability.

Application Fields

The IPC100N04S51R9ATMA1 is often used in high-frequency circuits and is suitable for RF power amplifier and RF transmission power switch applications. It is also commonly used in switched-mode power supplies and automotive applications.

Working Principle

Unlike a conventional metal-oxide-semiconductor field-effect transistor (MOSFET), the IPC100N04S51R9ATMA1 is designed to be an enhancement-mode device. This means that when a voltage is applied to its Gate terminal, a current will flow through the device.

The Gate terminal provides a path of conduction between the Source and Drain, allowing current to flow through the device. The strength of the electric field at the gate is determined by the applied voltage, controlling the amount of current that will flow through the device.

In addition, the channel of the MOSFET also has a depletion region. This region is formed by certain ions that are embedded in the insulating layer between the Gate and the Channel. When a voltage is applied to the Gate terminal, a reverse-biased electric field is created which depletes the ions in the depletion region. As the ions are depleted, the channel narrows, further reducing the conductivity of the MOSFET.

In short, the IPC100N04S51R9ATMA1 is an enhancement-mode MOSFET that is ideal for high-frequency applications. It is small in footprint, low on-resistance, fast switching, and provides a path of conduction between the Source and Drain when a voltage is applied to the Gate terminal.