IPC100N04S5L1R9ATMA1 Discrete Semiconductor Products |
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Allicdata Part #: | IPC100N04S5L1R9ATMA1TR-ND |
Manufacturer Part#: |
IPC100N04S5L1R9ATMA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 40V 100A 8TDSON |
More Detail: | N-Channel 40V 100A (Tc) 100W (Tc) Surface Mount PG... |
DataSheet: | IPC100N04S5L1R9ATMA1 Datasheet/PDF |
Quantity: | 14123 |
Vgs(th) (Max) @ Id: | 2V @ 50µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | PG-TDSON-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 100W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4310pF @ 25V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 81nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 1.9 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The IPC100N04S5L1R9ATMA1 is a single-channel enhancement mode power field-effect transistor (FET) designed primarily for power management applications. It is a discrete device, intended to be used in board level designs and provides excellent power management capabilities.
The IPC100N04S5L1R9ATMA1 is a user-friendly device, with a robust design utilized in many electronic power switching applications. The device is optimized for low on-state resistance and efficiency. It is suitable for applications as varied as power-factor correction, energy distribution systems and pumping systems.
The working principle behind the IPC100N04S5L1R9ATMA1 is relatively simple. This FET utilizes an internal gate-source capacitance. This capacitance causes any variation of the gate voltage to be coupled to the source. When the gate voltage is increased, current flows more freely between the source and drain, increasing the amount of current that can be supplied from the power supply.
The IPC100N04S5L1R9ATMA1 offers excellent performance and power management capabilities for a number of applications. The device is ideal for switchmode power supplies, DC-DC converter, d.c./ half-load charging, UPS, automotive engine and battery management, powertrain loads and various industrial applications.
Through the use of an enhanced N-channel MOSFET, it allows easy control of current or voltage, while achieving low power losses. This FET maintains an high efficiency in low-noise, high-speed switch mode power supplies, while consistently providing a thermal shut-off when the device is overloaded or performing over-current/voltage conditions. In addition, the IPC100N04S5L1R9ATMA1 has superior switching performance and is ESD protected.
IPC100N04S5L1R9ATMA1’s features include low on-resistances, gate drain and gate gate capacitance, Qg and Qgd ratings, voltage handling and operation at 150°C temperature. It also has superior switching performance and excellent avalanche ruggedness. The FET is suited for applications up to 10V and over 5A.
The IPC100N04S5L1R9ATMA1 is a great addition to any design that requires enhanced performance and power management capabilities. With its combination of low on-state resistance and superior thermal performance, it is well suited for a variety of DC-DC or AC-DC power conversion requirements. Additionally, its high gate capacitance and operational temperature range of -40°C to +150°C make it ideal for rugged applications.
The specific data is subject to PDF, and the above content is for reference
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