IPC100N04S52R8ATMA1 Discrete Semiconductor Products

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The IPC100N04S52R8ATMA1 is a single N-channel logic level enhancement type MOSFET manufactured by International Rectifier. It is used for a variety of applications such as switching, power management and interface circuits. It has a low on-state resistance and a maximum drain-source voltage of 40V. In addition, this MOSFET has a low threshold voltage of 2.5V, making it suitable for use in low-voltage applications.

The IPC100N04S52R8ATMA1 works on the principle of MOSFETs. It is short for Metal Oxide Semiconductor Field Effect Transistor, and the IPC100N04S52R8ATMA1 is a single N-channel type. MOSFETs are three-terminal devices that act as an electronic switch, controlling the flow of current in a circuit. The device consists of an insulated gate and a conductive channel, which act as a controllable gate voltage to either turn on or off the FET, regulating the amount of current flowing through it. When a positive voltage is applied to the gate, it creates an electric field between the source and drain that pulls free electrons to the gate, creating a conducting pathway between the source and drain. This conduction is called the drain current.

The IPC100N04S52R8ATMA1 is suitable for use in a wide range of applications. It can be used in power management applications due to its low on-state resistance, providing an efficient option for switching applications. It is also suitable for use in interface circuits, where it can be used to regulate analog and digital signals. In addition, the MOSFET is suitable for low-voltage applications due to its low threshold voltage.

The IPC100N04S52R8ATMA1 is a versatile device that is suitable for a range of different applications. Its low on-state resistance, maximum drain-source voltage and low threshold voltage make it suitable for use in power management, interface, and low-voltage applications. With its wide range of uses, it offers an efficient and cost effective solution. It is an excellent choice for those seeking a reliable and efficient MOSFET.

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