IPC173N10N3X1SA1 Allicdata Electronics
Allicdata Part #:

IPC173N10N3X1SA1-ND

Manufacturer Part#:

IPC173N10N3X1SA1

Price: $ 1.34
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 100V 1A SAWN ON FOIL
More Detail: N-Channel 100V 1A (Tj) Surface Mount Sawn on foil
DataSheet: IPC173N10N3X1SA1 datasheetIPC173N10N3X1SA1 Datasheet/PDF
Quantity: 1000
7910 +: $ 1.20510
Stock 1000Can Ship Immediately
$ 1.34
Specifications
Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 10V
Package / Case: Die
Supplier Device Package: Sawn on foil
Mounting Type: Surface Mount
Operating Temperature: --
Power Dissipation (Max): --
FET Feature: --
Vgs (Max): --
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Series: OptiMOS™
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Bulk 
Description

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The IPC173N10N3X1SA1 is a transistor originating from a family of insulated-gate field-effect transistors (IGFETs), or, more commonly, metal-oxide-semiconductor field-effect transistors (MOSFETs). It is a single-channel device, meaning it is typically used to control the behavior of a single load within a digital or analog system. Its application field covers a wide range of capacities.

The transistor\'s working theme is minimal current flowing between the load and the source (where it is connected to the power supply) when the gate voltage is low or zero. This behavior is known as enhancement-mode operation. It can allow for the electrical current to move through the load when the appropriate gate voltage is applied, although the device is classed as an normally-positive-off switch.

A single IPC173N10N3X1SA1 transistor consists of two regions of impurity doping, the source and the drain, both embedded inside a channel region. This channel is a highly doped structure that is insulated from the gate terminal by a thin conductive film called the gate oxide layer. This connection grants the device its high input impedance, a necessary quality for operational efficiency.

At its core, a transistor is an amplifier. This explains the various ways in which it can be used in an application like clamping or source follower circuits. Its ability to maintain a constant voltage output relative to the input can be useful for signal amplifying or signal filtering when necessary.

The IPC173N10N3X1SA1 can be useful in digital logic applications, as its normally-positive-off state allows it to function as a rapid switch between the ON and OFF state. This property can be seen with its usage as an inverter, as the transistor behaves like a digital switch, allowing for transistor to adjust electrical current flow depending on the presence or lack of presence of an electronic signal.

This particular single-channel MOSFET can be used in higher power applications such as switching power converters, DC-DC regulators, motor controllers, and so on.

In addition, IPC173N10N3X1SA1 transistors are quite popular in optical communication, as they are often used in link transmitter and receiver technology. Moreover, they are commonly used in audio applications and to control amplifier gain.

Aside from the applications just mentioned, the IPC173N10N3X1SA1 can also be implemented in energy-efficient LED lighting and power electronics, such as the combination of solar chimneys and heat pumps. This is because its normally-positive-off characteristic makes it compatible for controlling the flow and supply of energy.

Overall, the IPC173N10N3X1SA1 is a versatile transistor that can be used for a wide range of functions, from amplification and signal-boosting to power regulation and control. Its working principle is based on the controlled flow of electrical current between two paired terminals and is mediated by a gate voltage.

The specific data is subject to PDF, and the above content is for reference

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