Allicdata Part #: | IPC302N25N3X1SA1-ND |
Manufacturer Part#: |
IPC302N25N3X1SA1 |
Price: | $ 2.75 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 250V 1A SAWN ON FOIL |
More Detail: | N-Channel 250V 1A (Tj) Surface Mount Sawn on foil |
DataSheet: | IPC302N25N3X1SA1 Datasheet/PDF |
Quantity: | 1000 |
4425 +: | $ 2.47283 |
Rds On (Max) @ Id, Vgs: | 100 mOhm @ 2A, 10V |
Package / Case: | Die |
Supplier Device Package: | Sawn on foil |
Mounting Type: | Surface Mount |
Operating Temperature: | -- |
Power Dissipation (Max): | -- |
FET Feature: | -- |
Vgs (Max): | -- |
Vgs(th) (Max) @ Id: | 4V @ 270µA |
Series: | OptiMOS™ |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 1A (Tj) |
Drain to Source Voltage (Vdss): | 250V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Bulk |
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IPC302N25N3X1SA1 is a n-channel MOSFET that is part of the single FET family. Popularly known as an MOSFET (Metal Oxide Semiconductor Field-Effect Transistor), it is a voltage-controlled semiconductor device that is used for amplification, switching, and signal modulation. It also serves as a switching device in many power electronic devices.
It has many applications, ranging from mobile phones, computer systems, automotive systems, lighting systems, and power supply systems. It is also used in the industrial field for its individual low-power and low-leakage characteristics. It is most suited for high-frequency applications, and its capability to deliver high-voltage protection in shorted conditions make it perfect for power switching and protection applications.
The IPC302N25N3X1SA1 is an ideal device for switching applications due to its low on-state resistance and low input capacitance. It has a breakdown voltage of 25V with an on-resistance of 3x1 Ω. It also exhibits excellent thermal and current stability, allowing it to withstand high inrush currents during switching operations. With a maximum gate charge of 0.6nC, the device can be fully-operated within the temperature range of -40°C to + 125°C.
The working principle of the device lies in its ability to control the flow of electric current between two terminals, the source, and the drain. The flow of current between the two terminals is regulated by a voltage applied to the control gate. When the voltage applied to the control gate is low, it creates a depletion region which blocks current from flowing from the source to the drain. However, when a higher voltage is applied to the control gate, it creates an inversion region which allows current to flow from the source to the drain.
The IPC302N25N3X1SA1 has a high level of input capacitance compared to other devices, which makes it well-suited for high frequency applications. It also has a low reverse body diode leakage current and excellent thermal stability, which makes it an ideal choice for power supply circuit applications. In particular, its ability to provide high voltage protection in shorted conditions makes it a popular choice for power switching and protection applications.
In conclusion, the IPC302N25N3X1SA1 is an ideal device for switching and protection applications. It has a low on-state resistance and low input capacitance, and an impressive over-voltage protection in shorted conditions, making it perfect for high-frequency applications. It also offers excellent temperature and current stability and a very low reverse body diode leakage current, which makes it a great choice for power supply circuit applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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IPC302N08N3X2SA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 80V SAWN WAFE... |
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IPC3SAD7/1L0G | APEM Inc. | 17.61 $ | 1000 | SWITCH PUSH SPST-NO 0.5A ... |
IPC3SAD5L0Y | APEM Inc. | 18.13 $ | 1000 | SWITCH PUSH SPST-NO 0.5A ... |
IPC3SAD2L0G | APEM Inc. | 12.47 $ | 1000 | SWITCH PUSH SPST-NO 0.5A ... |
IPC3SAD7/1 | APEM Inc. | 9.18 $ | 1000 | SWITCH PUSH SPST-NO 0.5A ... |
IPC3SAD5 | APEM Inc. | 9.27 $ | 1000 | SWITCH PUSH SPST-NO 0.5A ... |
IPC3SAD9 | APEM Inc. | 12.94 $ | 1000 | SWITCH PUSH SPST-NO 0.5A ... |
IPC3FAD2L0G | APEM Inc. | 21.41 $ | 1000 | SWITCH PUSH SPST-NO 0.5A ... |
IPC3FAD6L0S | APEM Inc. | 21.41 $ | 1000 | SWITCH PUSH SPST-NO 0.5A ... |
IPC3FAD2L0S | APEM Inc. | 21.41 $ | 1000 | SWITCH PUSH SPST-NO 0.5A ... |
IPC3FAD2L0Y | APEM Inc. | 22.04 $ | 1000 | SWITCH PUSH SPST-NO 0.5A ... |
IPC3FAD7/1L0G | APEM Inc. | 22.04 $ | 1000 | SWITCH PUSH SPST-NO 0.5A ... |
IPC3SAD6L0G | APEM Inc. | 15.22 $ | 1000 | SWITCH PUSH SPST-NO 0.5A ... |
IPC3SAD2L0Y | APEM Inc. | 15.22 $ | 1000 | SWITCH PUSH SPST-NO 0.5A ... |
IPC3SAD1L0G | APEM Inc. | 15.22 $ | 1000 | SWITCH PUSH SPST-NO 0.5A ... |
IPC3FAD1 | APEM Inc. | 15.3 $ | 1000 | SWITCH PUSH SPST-NO 0.5A ... |
IPC3FAD7/1 | APEM Inc. | 15.3 $ | 1000 | SWITCH PUSH SPST-NO 0.5A ... |
IPC3FAD9 | APEM Inc. | 15.3 $ | 1000 | SWITCH PUSH SPST-NO 0.5A ... |
IPC3FAD2 | APEM Inc. | 15.74 $ | 1000 | SWITCH PUSH SPST-NO 0.5A ... |
IPC3FAD3 | APEM Inc. | 15.74 $ | 1000 | SWITCH PUSH SPST-NO 0.5A ... |
IPC3FAD6 | APEM Inc. | 15.74 $ | 1000 | SWITCH PUSH SPST-NO 0.5A ... |
IPC3FAD5 | APEM Inc. | 15.74 $ | 1000 | SWITCH PUSH SPST-NO 0.5A ... |
IPC3SAD2 | APEM Inc. | 10.53 $ | 604 | SWITCH PUSH SPST-NO 0.5A ... |
IPC3SAD1 | APEM Inc. | 11.03 $ | 1000 | SWITCH PUSH SPST-NO 0.5A ... |
IPC3SAD3 | APEM Inc. | 10.53 $ | 35 | SWITCH PUSH SPST-NO 0.5A ... |
IPC3SAD6 | APEM Inc. | 10.53 $ | 562 | SWITCH PUSH SPST-NO 0.5A ... |
IPC3SAD2L0S | APEM Inc. | 18.66 $ | 102 | SWITCH PUSH SPST-NO 0.5A ... |
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IPC302N08N3X1SA1 | Infineon Tec... | 2.31 $ | 1000 | MOSFET N-CH 80V 1A SAWN O... |
IPC302N15N3X7SA1 | Infineon Tec... | 2.17 $ | 1000 | MV POWER MOS |
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IPC300N20N3X7SA1 | Infineon Tec... | 2.19 $ | 1000 | MV POWER MOS |
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IPC302N20N3X1SA1 | Infineon Tec... | 2.65 $ | 1000 | MOSFET N-CH 200V 1A SAWN ... |
IPC302N25N3X1SA1 | Infineon Tec... | 2.75 $ | 1000 | MOSFET N-CH 250V 1A SAWN ... |
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