IPC30S2SN08NX2MA1 Allicdata Electronics
Allicdata Part #:

IPC30S2SN08NX2MA1-ND

Manufacturer Part#:

IPC30S2SN08NX2MA1

Price: $ 1.86
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MV POWER MOS
More Detail:
DataSheet: IPC30S2SN08NX2MA1 datasheetIPC30S2SN08NX2MA1 Datasheet/PDF
Quantity: 1000
3000 +: $ 1.66671
Stock 1000Can Ship Immediately
$ 1.86
Specifications
Series: *
Part Status: Active
Description

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Integrated Power Components Inc.'s IPC30S2SN08NX2MA1 transistor is a depletion-mode MOSFET with a dedicated drain-source voltage rating of 60 V and an on-state resistance of 20 mΩ. It is designed for high-current switching applications and is designed to produce high power with low capacitance and low gate input resistance.

The IPC30S2SN08NX2MA1 is a popular choice for applications where space constraints and low-power consumption are important. Some of the most common applications for this MOSFET include switching power supplies and DC-to-DC converters.

In a typical application, the IPC30S2SN08NX2MA1 MOSFET can be used as a switching element, switching current through it as instructed by a signal on the gate terminal. This signal can come from a microcontroller, logic chip, or any other signal source. When the gate is low, the MOSFET is off and no current can flow through the drain and source terminals. When the gate signal is high, the MOSFET is on and current can flow. This process is known as enhancement-mode operation, and the IPC30S2SN08NX2MA1 is designed for this type of operation.

The IPC30S2SN08NX2MA1 MOSFET has two functional characteristics that make it particularly suitable for high-current applications. First is its low on-state resistance. The IPC30S2SN08NX2MA1's on-state resistance of 20 mΩ makes it an excellent choice for switching applications where high currents are expected. Second, the drain-source voltage rating of 60 V means that the component can handle voltages of up to 60 V without significantly affecting its performance. This makes it suitable for applications where high voltages are expected.

The IPC30S2SN08NX2MA1 MOSFET is also a good choice for applications that require low capacitance. Low capacitance helps reduce power consumption, which is important in many applications. The low input resistance of the IPC30S2SN08NX2MA1 makes it an ideal choice for applications where low input resistance is required, such as in switching power supplies.

The IPC30S2SN08NX2MA1 MOSFET is a versatile and reliable transistor for high-current switching applications. It is well-suited for power supplies, DC-to-DC converters, and any other application where low capacitance and high current handling are important. With its low on-state resistance, high drain-source voltage rating, and low input resistance, this MOSFET is an excellent choice for high-quality switching applications.

The specific data is subject to PDF, and the above content is for reference

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