IPC302N15N3X1SA1 Allicdata Electronics
Allicdata Part #:

IPC302N15N3X1SA1-ND

Manufacturer Part#:

IPC302N15N3X1SA1

Price: $ 2.17
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 150V 1A SAWN ON FOIL
More Detail: N-Channel 150V 1A (Tj) Surface Mount Sawn on foil
DataSheet: IPC302N15N3X1SA1 datasheetIPC302N15N3X1SA1 Datasheet/PDF
Quantity: 1000
4425 +: $ 1.95261
Stock 1000Can Ship Immediately
$ 2.17
Specifications
Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 10V
Package / Case: Die
Supplier Device Package: Sawn on foil
Mounting Type: Surface Mount
Operating Temperature: --
Power Dissipation (Max): --
FET Feature: --
Vgs (Max): --
Vgs(th) (Max) @ Id: 4V @ 270µA
Series: OptiMOS™
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Bulk 
Description

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IPC302N15N3X1SA1 is a single-cell high-temperature Low-Voltage Field-Effect Transistor (FET). It is designed for use in applications that require a wide operating temperature range, high reliability, and high voltage performance. The device has been designed for high-temperature applications up to 155°C.

IPC302N15N3X1SA1 is typically used in power supplies and DC to DC converters. It is ideal for high-voltage and low-cost DC/DC applications, such as E/E power management, DC/DC converters and motor control in automotive and industrial applications.

The IPC302N15N3X1SA1’s operating principle is based on the field-effect transistor (FET) construction. This FET produces a conducting channel between the Drain and Source electrodes when the Gate voltage is raised above the threshold voltage. This creates a current path, allowing the drain and source to be connected. As the Gate voltage is increased, the channel between Source and Drain increases in size, allowing more current to pass.

The device has a low gate forward voltage, which is ideal for low-loss power converters. The low on-resistance of the FET allows for higher efficiency as well as improved thermal management. The low hysteresis ratings also make it suitable for applications where fast switching is required, such as in Class-D audio circuits.

IPC302N15N3X1SA1 is extremely robust, with a low-leakage junction and low thermal resistance ratings. The device also features a soft-start feature to increase system efficiency, reduce power consumption and reduce circuit start-up time. Additionally, the device is also RoHS compliant, eliminating a range of hazardous materials from its production, making it a more environmentally friendly choice.

In conclusion, IPC302N15N3X1SA1 is an excellent choice for high-temperature and high-reliability applications. Its low forward voltage and low on-resistance allow for high efficiency and improved thermal management, while its robust construction and soft-start feature makes it suitable for a variety of applications. Additionally, it is RoHS compliant, making it a more environmentally-friendly choice.

The specific data is subject to PDF, and the above content is for reference

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