IPC302N20N3X1SA1 Allicdata Electronics
Allicdata Part #:

IPC302N20N3X1SA1-ND

Manufacturer Part#:

IPC302N20N3X1SA1

Price: $ 2.65
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 200V 1A SAWN ON FOIL
More Detail: N-Channel 200V 1A (Tj) Surface Mount Sawn on foil
DataSheet: IPC302N20N3X1SA1 datasheetIPC302N20N3X1SA1 Datasheet/PDF
Quantity: 1000
4425 +: $ 2.38853
Stock 1000Can Ship Immediately
$ 2.65
Specifications
Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 10V
Package / Case: Die
Supplier Device Package: Sawn on foil
Mounting Type: Surface Mount
Operating Temperature: --
Power Dissipation (Max): --
FET Feature: --
Vgs (Max): --
Vgs(th) (Max) @ Id: 4V @ 260µA
Series: OptiMOS™
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Bulk 
Description

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The IPC302N20N3X1SA1 is a type of MOSFET (Metal-Oxide-Semiconductor Field-Effect-Transistor). And it\'s a single type device. Equipped with an integrated charge pump, these FETs are designed to operate with signal-switching frequencies up to 3 GHz. This type of transistor is ideal for applications involving signal switching in high-speed analog and digital circuits.

The IPC302N20N3X1SA1 is a three-terminal device, with the three terminals being the source, gate and drain. The source is typically connected to ground, the gate is an input signal and the drain is an output signal. It is an enhancement mode type, which means that a positive voltage applied to the gate will turn the device on and allow current to flow from the source to drain.

The IPC302N20N3X1SA1 has a wide variety of applications in a variety of different industries. It can be used in digital and analog circuit designs, as well as radio frequency design, including cellular telephone base stations, digital TV and satellite receivers, data communication systems and automated test systems. It is also used in computers and other electronic systems, such as display screens, digital cameras and audio devices.

The working principle of the IPC302N20N3X1SA1 is based on the MOSFET\'s capability of controlling the flow of current in one direction. This is done by channeling the current through the gate, which is connected to the source, and to the drain. The input signal applied to the gate, once it reaches a certain threshold, will switch the MOSFET on and allow current to flow from the source to the drain. Likewise, any decrease in the input signal will switch the MOSFET off thus preventing the current from flowing through it.

The IPC302N20N3X1SA1 is designed to operate with a drain-source voltage of up to 20V, a drain-current of 2A and a power rating of 25W maximum. It is capable of withstanding voltages up to 200V. The device also has an on-resistance of 4.5 ohms and an off-resistance of 33 ohms. It is available with a variety of lead-free packages to meet customer requirements.

In conclusion, the IPC302N20N3X1SA1 is a versatile single MOSFET with a wide range of applications and a working principle based on the device\'s capability of controlling the current flow in one direction. Its simple and reliable design, along with its high speed switching capability, makes it an ideal choice for a variety of high-speed digital and analog circuits. With its wide variety of lead-free packages and high power capabilities, it is a highly sought-after component in many different industries.

The specific data is subject to PDF, and the above content is for reference

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