IPC302N10N3X1SA1 Allicdata Electronics
Allicdata Part #:

IPC302N10N3X1SA1-ND

Manufacturer Part#:

IPC302N10N3X1SA1

Price: $ 1.91
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 100V 1A SAWN ON FOIL
More Detail: N-Channel 100V 1A (Tj) Surface Mount Sawn on foil
DataSheet: IPC302N10N3X1SA1 datasheetIPC302N10N3X1SA1 Datasheet/PDF
Quantity: 1000
4425 +: $ 1.72221
Stock 1000Can Ship Immediately
$ 1.91
Specifications
Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 10V
Package / Case: Die
Supplier Device Package: Sawn on foil
Mounting Type: Surface Mount
Operating Temperature: --
Power Dissipation (Max): --
FET Feature: --
Vgs (Max): --
Vgs(th) (Max) @ Id: 3.5V @ 302µA
Series: OptiMOS™
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Bulk 
Description

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The IPC302N10N3X1SA1 is a type of insulated gate bipolar transistor (IGBT) that is widely used in many applications. It is known for its high-density, low-power, and fast switching speeds. This type of IGBT is also commonly used in motor control, power regulation, and audio applications. In this article, we will discuss the application fields and working principles of the IPC302N10N3X1SA1.

Applications of the IPC302N10N3X1SA1

The IPC302N10N3X1SA1 is a versatile and reliable IGBT that is suitable for a wide variety of applications. It has a wide dynamic range, making it suitable for high-frequency switching of loads and control circuits, resulting in greater system efficiency. This IGBT is especially well-suited for uses in motor control, power regulation, and audio applications.

In motor control applications, the IPC302N10N3X1SA1 offers an efficient drive capability and a high switching frequency, allowing for improved system performance and dynamic response. This type of IGBT is also ideal for efficient and reliable power regulation. The IPC302N10N3X1SA1 is also well-suited for audio applications due to its low switching noise and low distortion, making it perfect for use in audio circuits.

Working Principle of the IPC302N10N3X1SA1

The IPC302N10N3X1SA1 is a type of insulated gate bipolar transistor (IGBT). This type of transistor works by combining a semiconductor and an insulated gate electrode to create a device that can control the flow of current. The device works by having one junction (the collector-emitter junction) as a switch and the other as an output element. When a voltage is applied to the gate, it causes an inversion layer of a-type semiconductor material beneath the gate to form, creating a conducting channel between the source and drain (the two terminals of the device).

The current flow through the device is then determined by the voltage on the gate electrode, controlling the state of the junction. When the voltage on the gate is low, the channel is in off state and no current flows through it. When the voltage on the gate is high, the channel is in on state and current can flow through it. This mechanism allows for efficient and fast switching of current, allowing for improved system efficiency and performance.

Conclusion

The IPC302N10N3X1SA1 is a versatile and reliable IGBT that is suitable for a wide variety of applications. It has a wide dynamic range, making it suitable for high-frequency switching of loads and control circuits, resulting in greater system efficiency. This type of IGBT is especially well-suited for uses in motor control, power regulation, and audio applications. In addition, the working principle of this device is based on the combination of a semiconductor and an insulated gate electrode, resulting in efficient and fast switching of current.

The specific data is subject to PDF, and the above content is for reference

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