Allicdata Part #: | IPI100N06S3-03-ND |
Manufacturer Part#: |
IPI100N06S3-03 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 55V 100A I2PAK |
More Detail: | N-Channel 55V 100A (Tc) 300W (Tc) Through Hole PG-... |
DataSheet: | IPI100N06S3-03 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 230µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | PG-TO262-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 300W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 21620pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 480nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 3.3 mOhm @ 80A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IPI100N06S3-03 is a power MOSFET transistor used in many circuits. It is a single 30V, 100A (max) power field-effect transistor that is suitable for use in switching applications in industrial, telecom, and consumer IT systems.
A power field-effect transistor is a type of transistor which is used in various switching and amplification applications. The IPI100N06S3-03 is controlled by voltage instead of current, which makes it ideal for low switch-on and switch-off times.
The IPI100N06S3-03 uses a MOSFET chip that is made from silicon, which is a very good conductor of electricity. The chip\'s main components are source and drain, gate, body-diode, and gate-driver.
The source and drain are the two terminals of the many-sided brick-shaped MOSFET, acting like a switch that is opened or closed depending on the input voltage or current. When a positive voltage is applied to the drain, current will flow between the source and drain.
The gate is a terminal that is used to control the voltage or current needed to turn the MOSFET ON or OFF. It is connected to the source and drained buildings through a charge layer, responsible for controlling the flow of electrons.
The body-diode is a two-layer p-n junction, acting as a rectifier, used for protection against stress, overvoltage, and other conditions. The gate-driver is used to turn the MOSFET ON and OFF, controlled by the logical level in the output pin.
The IPI100N06S3-03 is mainly used for power management and data processing related applications, for example, in power supplies, chargers, switching regulators, and audio power amplifiers. In such applications, the IPI100N06S3-03 can switch high currents accurately and quickly, ensuring fast and error-free operation.
It is also used in motor drivers and solenoid drivers, as it can withstand high voltage spikes. The device is capable of switching off and on within nanoseconds and is designed to be efficient and reliable, despite its small size.
In summary, the IPI100N06S3-03 is a single 30V, 100A (max) power field-effect transistor that is suitable for use in switching applications in industrial, telecom, and consumer IT systems. It is primarily used in power management and data processing applications, motor drivers and solenoid drivers, as it can withstand high voltage spikes and switch off and on within nanoseconds with great accuracy.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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IPI100N06S3-03 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 100A I2PA... |
IPI100N06S3-04 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 100A TO-2... |
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IPI100N08N3GHKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 80V 70A TO262... |
IPI100P03P3L-04 | Infineon Tec... | 0.0 $ | 1000 | MOSFET P-CH 30V 100A TO26... |
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IPI16CN10N G | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 100V 53A TO26... |
IPI16CNE8N G | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 85V 53A TO262... |
IPI120N06S402AKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 60V 120A TO26... |
IPI120N06S403AKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 60V 120A TO26... |
IPI120N06S4H1AKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 60V 120A TO26... |
IPI126N10N3 G | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 100V 58A TO26... |
IPI100N04S4H2AKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 40V 100A TO26... |
IPI120N06S402AKSA2 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 60V 120A TO26... |
IPI120P04P404AKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET P-CH TO262-3P-Chan... |
IPI120P04P4L03AKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET P-CH TO262-3P-Chan... |
IPI11N60C3AAKSA2 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH I2PAK |
IPI120N06S403AKSA2 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH TO262-3N-Chan... |
IPI120N06S4H1AKSA2 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH TO262-3N-Chan... |
IPI120N04S4-01M | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH TO262-3 |
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IPI120N08S404AKSA1 | Infineon Tec... | 1.32 $ | 1000 | MOSFET N-CH TO262-3N-Chan... |
IPI120N10S405AKSA1 | Infineon Tec... | 1.33 $ | 1000 | MOSFET N-CH TO262-3N-Chan... |
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