Allicdata Part #: | IPI120N04S302AKSA1-ND |
Manufacturer Part#: |
IPI120N04S302AKSA1 |
Price: | $ 1.55 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 40V 120A TO262-3 |
More Detail: | N-Channel 40V 120A (Tc) 300W (Tc) Through Hole PG-... |
DataSheet: | IPI120N04S302AKSA1 Datasheet/PDF |
Quantity: | 1000 |
500 +: | $ 1.39811 |
Vgs(th) (Max) @ Id: | 4V @ 230µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | PG-TO262-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 300W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 14300pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 210nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 2.3 mOhm @ 80A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Tube |
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The IPI120N04S302AKSA1 is a four-channel high voltage and high temperature power-over-ethernet (PoE) MOSFET that belongs to the family of transistor-fets (FETs). This state-of-the-art device is capable of offering highly efficient thermal performance the highest temperature rating of 150°C. It also has a wide range of application fields, making it suitable for a broad range of electronic applications.
When used in a PoE system, the IPI120N04S302AKSA1 functions as a switch that is used to drive a variety of loads, including LED lighting, motors, as well as TVs and other consumer electronics. Similarly, it can be used to drive a variety of other loads, such as relays, solenoids, and other high-power devices. The fact that it is able to handle such a wide variety of loads makes it a highly versatile device that can be used in a variety of applications.
What sets the IPI120N04S302AKSA1 apart from other MOSFETs is its high voltage capability, enabling it to accept up to 20 volts of input and outputting up to 15 volts of output. This makes it ideal for applications that require high voltage power conversion and regulation, such as those found in industrial automation, lighting control, and consumer electronics.
The working principle of the IPI120N04S302AKSA1 is relatively simple and straightforward. Unlike most MOSFETs, it is self-protected, meaning that it constantly adapts itself to a given situation and can handle adverse conditions and environments. Specifically, it has an integrated charge pump circuitry, internal bootstrap circuit, and an adjustable gate-source undervoltage lockouts system. These features ensure that the device is able to remain operational, even when subjected to high temperatures, abnormal voltages, and other harsh conditions.
The IPI120N04S302AKSA1 is packed in a small, surface-mountable package, making it ideal for applications where board space is at a premium. It is also designed with advanced thermal management that enables it to operate reliably in harsh environments. The device is able to handle large transient voltages and currents and is immune to switch bounce and false triggering, making it an ideal choice for applications where reliability is of the utmost importance.
In conclusion, the IPI120N04S302AKSA1 is a highly efficient and reliable four-channel high voltage and high temperature power-over-ethernet (PoE) MOSFET. Its wide range of application fields, self-protection and integrated features, and small package size make it ideal for a variety of applications. Its working principle ensures that it is able to handle large transient voltages and currents and is immune to switch bounce and false triggering, further enhancing its reliability. The device is thus suitable for a broad range of applications, such as industrial automation, lighting control, and consumer electronics.
The specific data is subject to PDF, and the above content is for reference
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