IPI100N06S3L04XK Allicdata Electronics
Allicdata Part #:

IPI100N06S3L04XK-ND

Manufacturer Part#:

IPI100N06S3L04XK

Price: $ 1.88
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 55V 100A TO-262
More Detail: N-Channel 55V 100A (Tc) 214W (Tc) Through Hole PG-...
DataSheet: IPI100N06S3L04XK datasheetIPI100N06S3L04XK Datasheet/PDF
Quantity: 119
1 +: $ 1.70730
10 +: $ 1.54161
100 +: $ 1.23858
Stock 119Can Ship Immediately
$ 1.88
Specifications
Vgs(th) (Max) @ Id: 2.2V @ 150µA
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: PG-TO262-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 214W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 17270pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 362nC @ 10V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 80A, 10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IPI100N06S3L04XK is a single N-channel E-mode MOSFET that is optimized for high-frequency switching applications. This device is best suited for a variety of applications, from high frequency motor drive controllers to applications in the telecom industry.

To understand how the device can be used, one must first understand the basics of a MOSFET. Essentially, a MOSFET is a voltage-controlled field effect transistor, meaning that the current passing through it is controlled by the voltage applied to its gate terminal. The device comes in either an N-channel or P-channel type, with the N-type MOSFET being the most commonly used.

The IPI100N06S3L04XK is an N-type MOSFET, meaning that it is blocked or off when the voltage applied to the gate terminal is at or near zero. As the voltage applied to the gate terminal increases, the current passing through the device increases as well. This is known as the “on” state and can be used for a variety of high-frequency switching applications.

The IPI100N06S3L04XK is particularly useful in high-frequency switching applications due to its low on-resistance and high frequency characteristics. Its low on-resistance makes it ideal for switching between high and low voltage levels, while its high frequency characteristics make it suitable for high-speed switching applications. Its low input capacitance and low output capacitance also make it suitable for switching between high power supply frequencies.

The device is also well-suited for applications in the telecom industry, as it is designed to have a low gate leakage current to reduce interference with sensitive RF signals. It is also designed to have a low parasitic capacitance and low switching loss, allowing it to switch faster and with less power than traditional MOSFETs.

In addition to its applications, the IPI100N06S3L04XK can also be used as an amplifier, voltage regulator, and current source. Its high transconductance and low gate capacitance make it ideal for linear amplifier applications. Its inherent breakdown voltage can be used to regulate voltage, while its low gate-to-drain capacitance makes it ideal for controlling current. Furthermore, its high frequency characteristics make it suitable for high switching speed applications.

All in all, the IPI100N06S3L04XK is an excellent choice for a variety of high-frequency switching applications. From telecom equipment to motor drives, this device is ideal for providing reliable and efficient switching. Its low on-resistance, low gate capacitance, and high frequency characteristics make it an ideal device for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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