IPI120N06S403AKSA1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IPI120N06S403AKSA1 is a single N-Channel Enhanced Power MOSFET, which is part of a large family of MOSFETs from Infineon Technologies. This device is designed for applications such as high power switching, AC or DC motor drives, high-efficiency power conversion and uninterruptible power supplies (UPS) with tightest on-resistance, fast body diode, superior Power Avalanche Ruggedness, and high power density.

The IPI120N06S403AKSA1 can act as either a switch or a linear component, depending on its application. When used as a switch, it can provide a low resistance conducting path between its drain and source terminals when the gate voltage reaches a certain threshold. This voltage, known as the \'threshold voltage\', must be controlled and kept within a specific range in order to achieve the desired performance.

In linear applications, such as in power supplies or amplifiers, the IPI120N06S403AKSA1 acts as a variable resistor, with a resistance that depends on the gate voltage as applied across it. As the voltage is increased, the internal resistance decreases, allowing current to flow from drain to source. This configuration is often used when a low output resistance and high current gain is desired.

The IPI120N06S403AKSA1 is a very high-efficient device, and is primarily used in power applications where high power density and high current handling capability is required. It is particularly suitable for AC and DC motor drives, industrial robotics, UPS, and high-efficiency power conversion systems. The device also features an additional clamp diode and ESD protection circuits which make it suitable for consumer applications, such as TVs, and other high-power consumer electronics.

The IPI120N06S403AKSA1 is an enhanced power MOSFET which has been designed to offer improved power losses and electrical breakdown strength. This improved efficiency comes from the special gate, engineering process, and copper structure that all work together to reduce impedance and improve thermal characteristics. The device also includes ESD protection circuits to protect it from static discharge and reduce the risk of damage due to static electricity.

In brief, the IPI120N06S403AKSA1 is a single N-Channel MOSFET, which is a high-efficiency power device primarily used in applications requiring high current handling capabilities, fast switching speeds, and low on-resistance. It can be used as either a switch or a linear component, allowing it to provide optimized performance in a variety of power control applications. The device\'s additional clamp diode and ESD protection circuits further increase its reliability and protection against static electricity, making it suitable for many consumer applications.

The specific data is subject to PDF, and the above content is for reference