
Allicdata Part #: | IPI100P03P3L-04-ND |
Manufacturer Part#: |
IPI100P03P3L-04 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 30V 100A TO262-3 |
More Detail: | P-Channel 30V 100A (Tc) 200W (Tc) Through Hole PG-... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Vgs(th) (Max) @ Id: | 2.1V @ 475µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | PG-TO262-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 200W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 9300pF @ 25V |
Vgs (Max): | +5V, -16V |
Gate Charge (Qg) (Max) @ Vgs: | 200nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 4.3 mOhm @ 80A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
Description
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IPI100P03P3L-04 is a high-performance, low-power, low-voltageDWN-channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) which is suitable for powering low power applications and for signal switching. It is a single-channel and JFET (Junction Field Effect Transistor) device with a maximum drain-source voltage of 100 V and a maximum drain current of 3 A. It is designed to provide low on-resistance and excellent thermal characteristics.
Overview of IPI100P03P3L-04
The IPI100P03P03L-04 is a high-performance, low-power, low-voltageDWN-channel MOSFET. It has a maximum drain-source voltage of 100 V and a maximum drain current of 3 A. It is designed to have low input capacitance and very low threshold voltage. The device has a maximum gate-source voltage of -5 V and a drain-source capacitance of 5.5 pF at Vgs = 0 V.The IPI100P03P03L-04 is available in a TO-251 package. It has a low thermal resistance and is specifically designed to provide high power switching capability with low on-resistance. The device has an average on-resistance of 0.024 Ω and an average current handling capability of 3 A. The device is also designed with a low maximum gate charge for faster switching speeds.Applications of IPI100P03P03L-04
The IPI100P03P03L-04 is suitable for a wide range of applications such as AC/DC and DC/DC converters, laptop computers, power supplies, motor drives, switch mode power supplies, and low-voltage circuit breakers. The device is also suitable for the switching of loads in low voltage systems.The MOSFET is also suitable for use in switch panels, automatic switches, smoke detectors, and electronic clocks. The device can be used in medical devices as well, such as ultrasonic diagnostic and imaging devices, and also in noise cancellation devices.Working Principle of IPI100P03P03L-04
The IPI100P03P03L-04 is a low-power, low-voltageDWN-channel MOSFET, meaning it uses an insulated gate to control the conductivity of a channel between its source and drain. When a positive voltage is applied to the gate, current flows from the source to the drain. This current is known as the drain current.When no voltage is applied to the gate, the drain current is zero because no voltage is applied to the channel between the source and drain. This is known as the cutoff voltage. When the voltage is increased beyond the cutoff voltage, the drain current starts to increase exponentially.The IPI100P03P03L-04 has a maximum drain current of 3 A and a maximum drain-source voltage of 100 V, meaning that it can provide a high level of switching capability with low on-resistance. The low on-resistance gives the MOSFET a low heat generation, leading to a longer lifetime.Conclusion
The IPI100P03P03L-04 is a high-performance, low-power, low-voltageDWN-channel MOSFET which is suitable for powering low power applications and for signal switching. It has a maximum drain-source voltage of 100 V and a maximum drain current of 3 A. The device is designed to have low input capacitance and very low threshold voltage. It has an average on-resistance of 0.024 Ω and an average current handling capability of 3 A. The device is suitable for a wide range of applications such as AC/DC and DC/DC converters, laptop computers, power supplies, motor drives, switch mode power supplies, and low-voltage circuit breakers. The device uses an insulated gate to control the conductivity of a channel between its source and drain, providing a high level of switching capability with low on-resistance.The specific data is subject to PDF, and the above content is for reference
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