Allicdata Part #: | IR2101PBF-ND |
Manufacturer Part#: |
IR2101PBF |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Infineon Technologies |
Short Description: | IC DRIVER HIGH/LOW SIDE 8DIP |
More Detail: | Half-Bridge Gate Driver IC Non-Inverting 8-DIP |
DataSheet: | IR2101PBF Datasheet/PDF |
Quantity: | 2728 |
Current - Peak Output (Source, Sink): | 210mA, 360mA |
Base Part Number: | IR2101PBF |
Supplier Device Package: | 8-DIP |
Package / Case: | 8-DIP (0.300", 7.62mm) |
Mounting Type: | Through Hole |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Rise / Fall Time (Typ): | 100ns, 50ns |
High Side Voltage - Max (Bootstrap): | 600V |
Input Type: | Non-Inverting |
Series: | -- |
Logic Voltage - VIL, VIH: | 0.8V, 3V |
Voltage - Supply: | 10 V ~ 20 V |
Gate Type: | IGBT, N-Channel MOSFET |
Number of Drivers: | 2 |
Channel Type: | Independent |
Driven Configuration: | Half-Bridge |
Part Status: | Active |
Packaging: | Tube |
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The IR2101PBF Gate Driver is a CMOS device containing two drivers in a single package. It is specifically designed for controllingnmosfets and IGBTs in applications involving low-side and high-side switching, bridge and H-bridge circuits. It provides a single output for both devices. This device combines two monolithic high-and-low side gate drivers, a low-side gate driver containing a low-side output and a high-side gate driver containing an adaptive under-voltage lockout, low-current density and a high-side stage formed by a floating P and N-channel MOSFET. The under-voltage lockout and power-up sequencing circuitry are integrated to suppress shoot-through current, while an adjustable dead-time is achieved through an external RC network.
The IR2101PBF is designed to function in the most demanding power management applications, and to address the growing need for efficient power management. It reduces power consumption and enhances control in low-voltage and high-current applications, such as motor control, LED lighting and audio amplification. It has several distinctive features, such as integrated under-voltage lockout and power-up sequencing circuitry that are designed to reduce shoot-through current.
The primary benefit of the IR2101PBF is the ease of use and its ability to simplify power management for customers. It has an adjustable dead-time, an integrated low-current adaptive lock-out, thermal shutdown protection and a high voltage tolerance of up to +100V. It also includes a low power dissipation standby mode. The simplicity of use and the integration of features makes it highly attractive to designers.
In addition, the IR2101PBF offers level-shifting of no more than 400mV, ensuring low-side n-MOSFET switch-on and high-side p-MOSFET switch-on. The built-in level shifting also eliminates the need for additional external level-shiftingdiodes, thus reducing the problem of damage due to parasitic inductance. The device also features a self-oscillation dead-time, adjustable up to a maximum of 400ns, allowing a longer period of oscillation for greater energy efficiency. It also offers an adjustable UVLO, allowing it to be custom-tailored to the system needs.
The IR2101PBF gate driver is a cost-effective solution for controlling NMOSFETS and IGBTs, as it eliminates the need for additional external components and level shifting circuitry. The features, such as adjustable dead-time and integrated under-voltage lockout, increase the efficiency and safety of the system. It is well-suited for use in a variety of applications, such as motor control, LED lighting and audio amplification.
The specific data is subject to PDF, and the above content is for reference
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