| Allicdata Part #: | IR2131-ND |
| Manufacturer Part#: |
IR2131 |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Infineon Technologies |
| Short Description: | IC DRIVER BRIDGE 3-PHASE 28-DIP |
| More Detail: | Half-Bridge Gate Driver IC Inverting 28-PDIP |
| DataSheet: | IR2131 Datasheet/PDF |
| Quantity: | 1000 |
| Current - Peak Output (Source, Sink): | 250mA, 500mA |
| Base Part Number: | IR2131 |
| Supplier Device Package: | 28-PDIP |
| Package / Case: | 28-DIP (0.600", 15.24mm) |
| Mounting Type: | Through Hole |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Rise / Fall Time (Typ): | 80ns, 40ns |
| High Side Voltage - Max (Bootstrap): | 600V |
| Input Type: | Inverting |
| Series: | -- |
| Logic Voltage - VIL, VIH: | 0.8V, 2.2V |
| Voltage - Supply: | 10 V ~ 20 V |
| Gate Type: | IGBT, N-Channel MOSFET |
| Number of Drivers: | 6 |
| Channel Type: | Independent |
| Driven Configuration: | Half-Bridge |
| Part Status: | Obsolete |
| Packaging: | Tube |
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Power Metal-Oxide Semiconductor Field Effect Transistor (MOSFET) is an integrated-circuit based half-bridge MOSFET driver optimised for controlling a half bridge powered by an Auxiliary Power Supply (APS).IR2131 is an example of PMIC (Power Management Integrated Circuit) gate driver that is targeted for a wide variety of applications.
The IR2131 is a high current gate driver that combines a MOSFET driver (MOSD-TEC) with two channels of high-side/low-side drive circuitry. It is optimized for reliable switching performance and high system efficiency. The integrated driver provides a high level of drive current to the gate of the MOSFETs. As a result, the efficiency of operation is improved, while the power dissipation is lowered.
IR2131 is especially suitable for applications such as motor control, test and measurement, load switching, and other purposes that require a high level of switching performance. The IR2131 is ideal for applications with limited board space, as it integrates the functionality of a high-side/low-side driver and a MOSFET driver in one package.
The working principle of the IR2131 is based on the MOSD-TEC (MOS Transconductance-to-Envelope Control) design. This technology provides a high level of current to the MOSFET gates and results in higher efficiency and lower power dissipation. The IR2131 has two channels of high-side and low-side drive current and can provide up to 3A of current to drive the MOSFETs. Additionally, the IR2131 has integrated protection features such as undervoltage lockout and overcurrent protection.
The IR2131 is suitable for a variety of applications such as motor control, load switching, and other purposes that require a high level of switching performance. It is also suitable for applications with limited board space as it integrates the functionality of a high-side/low-side driver and MOSFET driver into one package. Additionally, due to the high-current capability of the device, it is ideal for applications that require a high level of switching performance.
In summary, IR2131 is an example of PMIC (Power Management integrated circuit) gate driver targeted for a wide range of applications. It is based on the MOSD-TEC design for high current drive to the MOSFET gates. It is suitable for applications such as motor control, load switching and test and measurement. The integrated protection features such as undervoltage lockout and overcurrent protection make the IR2131 ideal for power efficient applications.
The specific data is subject to PDF, and the above content is for reference
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IR2131 Datasheet/PDF