Allicdata Part #: | IR2111PBF-ND |
Manufacturer Part#: |
IR2111PBF |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Infineon Technologies |
Short Description: | IC DRIVER HALF-BRIDGE 8-DIP |
More Detail: | Half-Bridge Gate Driver IC Non-Inverting 8-DIP |
DataSheet: | IR2111PBF Datasheet/PDF |
Quantity: | 2346 |
Current - Peak Output (Source, Sink): | 250mA, 500mA |
Base Part Number: | IR2111PBF |
Supplier Device Package: | 8-DIP |
Package / Case: | 8-DIP (0.300", 7.62mm) |
Mounting Type: | Through Hole |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Rise / Fall Time (Typ): | 80ns, 40ns |
High Side Voltage - Max (Bootstrap): | 600V |
Input Type: | Non-Inverting |
Series: | -- |
Logic Voltage - VIL, VIH: | 8.3V, 12.6V |
Voltage - Supply: | 10 V ~ 20 V |
Gate Type: | IGBT, N-Channel MOSFET |
Number of Drivers: | 2 |
Channel Type: | Synchronous |
Driven Configuration: | Half-Bridge |
Part Status: | Active |
Packaging: | Tube |
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IR2111PBF is a type of gate driver PMIC (Power Management Integrated Circuit). It mainly used to drive the gates of power MOSFETs, IGBTs (Insulated-Gate Bipolar Transistors) and other low-voltage power transistors. This gate driver integrates power MOSFET/IGBT driver, UVLO (Undervoltage Lockout) and control logic in one compact package. The sophisticated design is ideal for various applications due to its reliable performance and low cost.
IR2111PBF provides versatile over-voltage and under-voltage protections to the power MOSFET/IGBT by employing its drain-to-source voltage (VDS) monitoring and its wide input voltage range of 14V to 40V. An internal control logic ensures accurate functioning sequences between the VDS and GND, and then adjusts the gate driving voltage accordingly. Also, it features over-current protection with low gate driving current in order to prevent damage to the power transistor gate due to over-current.
The design of IR2111PBF provides superior protection capabilities by integrating UVLO, overvoltage detection and overcurrent protection into the same device. The overvoltage detection prevents the power stage from being subjected to transient overvoltage events, and the over-current protection limits the over-current condition and then reduces the power losses. Moreover, the UVLO function improves the life span of the power MOSFET/IGBT by avoiding over-voltage and over-current conditions.
To reduce the total power dissipation, the IR2111PBF is designed with adaptive low-side gate driving voltage which can be adjusted by the programmed over-current protection current. The low-side gate driving voltage can be programmed to a maximum of 13V. This eliminates the need for an extra external power supply, making the device simpler and more cost-effective.
In addition, the power stage of IR2111PBF is optimized with a slew rate of 60V/μs and a peak source/sink current capability of 5A/6A. The output stage is constructed of a high-frequency, low-side power MOSFET which is capable of providing a high power switch-mode operation with low power dissipation.
IR2111PBF has a wide range of applications such as power stages for motor control, uninterruptible power supply, motor inverter and solar switching. This gate driver is especially suitable for industrial and automotive sectors due to its small size and powerful performance. Furthermore, IR2111PBF can help users to reach the standard requirement of efficiency, power density and reliability.
Overall, the IR2111PBF is a reliable and cost-effective gate driver that offers superior performance for applications requiring high power switch-mode operations. Its intelligent on-chip control logic and UVLO feature ensure accurate functioning and enhanced protection features against over-voltage and over-current. It is able to provide a more efficient, reliable and cost-effective alternative to conventional power stages.
The specific data is subject to PDF, and the above content is for reference
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