| Allicdata Part #: | IR2113STR-ND |
| Manufacturer Part#: |
IR2113STR |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Infineon Technologies |
| Short Description: | IC MOSFET DRVR HI/LO SIDE 16SOIC |
| More Detail: | Half-Bridge Gate Driver IC Non-Inverting 16-SOIC |
| DataSheet: | IR2113STR Datasheet/PDF |
| Quantity: | 1000 |
| Current - Peak Output (Source, Sink): | 2A, 2A |
| Base Part Number: | IR2113S |
| Supplier Device Package: | 16-SOIC |
| Package / Case: | 16-SOIC (0.295", 7.50mm Width) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Rise / Fall Time (Typ): | 25ns, 17ns |
| High Side Voltage - Max (Bootstrap): | 600V |
| Input Type: | Non-Inverting |
| Series: | -- |
| Logic Voltage - VIL, VIH: | 6V, 9.5V |
| Voltage - Supply: | 3.3 V ~ 20 V |
| Gate Type: | IGBT, N-Channel MOSFET |
| Number of Drivers: | 2 |
| Channel Type: | Independent |
| Driven Configuration: | Half-Bridge |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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IR2113STR is an advanced high and low side driver, designed for use in a wide variety of applications. The IR2113STR is particularly suited for power management IC (PMIC) applications, as a gate driver for MOSFET or IGBT power switches. The device is manufactured in a monolithic CMOS process, providing superior performance combined with low quiescent current and a low drive voltage.
The IR2113STR is designed to drive n-channel and/or p-channel MOSFET or IGBT devices up to 100V, with high-side supply voltage up to 24V. The device is controlled by a low-voltage logic signal and can be used to implement both high-side and low-side floating power switches. It includes circuitry to sense the voltage difference between the source and the drain of the external switching device, allowing reliable controlling of the device without a sense resistor.
The IR2113STR also includes a wide range of features, including advanced fault protection functions, and programmable dead-time parameters with an external resistor. It also includes foldback and thermal shutdown circuits, as well as a built-in fault-latch circuit. These features provide the user with superior protection from dynamic fault conditions, and improved reliability of the system.
The IR2113STR gate driver has several advantages when compared to traditional solutions. It has low drive voltage, low quiescent current, and superior fault protection. Additionally, the combination of CMOS process and advanced circuitry provides improved performance and reliability. The use of a sense resistor for each drive is no longer necessary, reducing overall cost and complexity.
The working principle of the IR2113STR is based on its high-low side driver architecture. The device is controlled by a low-voltage logic signal, and includes the necessary circuit elements and enable interface to control the external device. The device also includes a programmable dead-time and foldback, as well as advanced fault protection functions. The device senses the voltage difference between the source and the drain of the external switching device, allowing reliable controlling of the device without a sense resistor.
In summary, the IR2113STR is an advanced high-low side driver package, specifically designed for PMIC applications. This high-performance device offers a wide range of features and improved reliability. The device includes integrated high and low side drivers, as well as an advanced fault protection system and an enable interface. Furthermore, the device is controllable via a low-voltage logic signal and can sense the voltage difference between the source and the drain of the external switching device without requiring the use of a sense resistor.
The specific data is subject to PDF, and the above content is for reference
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IR2113STR Datasheet/PDF