IR2117PBF

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The IR2117PBF is a high performance gate driver IC that provides high current sinks and low resistance (RDSon) drivers for gate-controlled power MOSFETs and IGBTs. It is rated for output current capabilities up to 2A and maximized drive dissipation and high dv/dt immunity.

The IR2117PBF provides the necessary drive to power MOSFETs and IGBTs in most power circuits, such as motor control, power supplies, and appliances. Because the gate charge of power MOSFETs and IGBTs increases with higher gate voltage, the higher the gate voltage, the increasingly necessary and beneficial the IR2117PBF is in power systems.

Applications for the IR2117PBF include use in low voltage (up to 500V) full and half-bridge drivers, as well as for four-quadrantgatedrivers, unipolar and bipolar stepper motor drivers, and solar panel applications. It is also suitable for driving high-side and low-side N-Channel MOSFETs and IGBTs, and high current applications like brushless DC motors, DC heaters, and DC power supplies.

The IR2117PBF provides an internal charge pump that allows it to operate with a single 5V supply and allows it to drive higher gate voltages. The isolated ground pin helps maintain reliable isolation between the logic, power, and control grounds. The wide switching frequency range and internal deadtime control ensures dead times of 10ns to 200nsec. Additionally, the IR2117PBF has several diagnostic pins which monitor the status of the outputs, over current, fault conditions and output voltage.

The working principle of the IR2117PBF is relatively straightforward. It is a self-contained chip with all the necessary components to deliver current pulses to the gate of power MOSFET/IGBT. It has two different output channels: High Side and Low Side. The user can input logic signals from a microcontroller or a PLC to control the power MOSFET gates.

The chip incorporates a single 5V supply, charge pump, driver and gate protection circuit. The charge pump boosts the 5V input to the desired gate voltage drive capability of the chip. The driver takes the output of the charge pump and amplifies it for the power MOSFET gate. The gate protection circuit helps to protect the FET gate from over-current and over-voltage. It also has several diagnostic pins which can be used to monitor the output voltage, as well as the over-current, fault conditions and output voltage.

In conclusion, IR2117PBF is an ideal choice for low voltage and high currents applications where power MOSFET/IGBT gate drive is needed. It provides good noise immunity, high-side and low-side N-channel MOSFET/IGBT gate drive, high gate voltage drive, low stand-by current, internal deadtime control and a wide switching frequency range. It is suitable for use in a variety of applications, such as motor control, power supplies and appliances.

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