Allicdata Part #: | IR2118-ND |
Manufacturer Part#: |
IR2118 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Infineon Technologies |
Short Description: | IC MOSFET DRIVER HIGH-SIDE 8-DIP |
More Detail: | High-Side Gate Driver IC Inverting 8-DIP |
DataSheet: | IR2118 Datasheet/PDF |
Quantity: | 190 |
Current - Peak Output (Source, Sink): | 250mA, 500mA |
Base Part Number: | IR2118 |
Supplier Device Package: | 8-DIP |
Package / Case: | 8-DIP (0.300", 7.62mm) |
Mounting Type: | Through Hole |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Rise / Fall Time (Typ): | 80ns, 40ns |
High Side Voltage - Max (Bootstrap): | 600V |
Input Type: | Inverting |
Series: | -- |
Logic Voltage - VIL, VIH: | 6V, 9.5V |
Voltage - Supply: | 10 V ~ 20 V |
Gate Type: | IGBT, N-Channel MOSFET |
Number of Drivers: | 1 |
Channel Type: | Single |
Driven Configuration: | High-Side |
Part Status: | Obsolete |
Packaging: | Tube |
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The IR2118 Gate Driver IC is a high frequency half-bridge driver designed specifically for Power MOSFET applications. It is used to drive large capacitive loads, such as in power supply designs or power amplifier stages. By allowing users to quickly and easily isolate the gate-drive signals from their source, while also providing high current delivery and efficient galvanic isolation, the IR2118 makes powering large and high frequency power supplies much easier.
The IR2118 features a high level of integration, with two isolated voltage channels to independently drive the two gate terminals of a power MOSFET. The first channel consists of two P-type transistors, tied together to form a high-speed low-resistance connection to the gate of the MOSFET. The second channel consists of two N-type transistors, tied in series to provide a low-resistance connection to the source of the MOSFET. Thechannel transistors are designed to operate with low gate-charge at high speeds and can be used to drive high-current MOSFETs with ease.
Both channels can also be individually enabled and disabled to quickly shut off the gate drive and provide automatic current limiting, should an overload condition be present. This feature is especially important in higher power supply designs, as current limiting can prevent damage to the MOSFETs if an overload is present.The IR2118 IC has an adjustable gate drive voltage level, allowing users to apply the appropriate voltage to the gate terminal of the MOSFET for optimal performance.
This chip also comes with a variety of protection features, such as under-voltage lockout, over-voltage protection, and thermal shutdown, which can protect the MOSFETs from damage due to extreme operational conditions. The IR2118 is also designed to meet stringent ESD requirements, ensuring safety and reliability in heavily ESD-prone environments. Furthermore, the IR2118 is designed to withstand temperatures up to 150°C, making it ideal for power supply designs with high transient loads.
One of the main uses of the IR2118 IC is in automotive applications, as it can be used to drive large loads with high efficiency and reliability. Its adjustable gate drive voltage, protection features, and high temperature rating make it a perfect fit for high power automotive electronics. IR2118 can also be used in industrial applications, such as high power motor control, robotics, and elevator control.
In summary, the IR2118 Gate Driver IC is a high-performance, high-frequency driver specifically designed for power MOSFET applications. Its high level of integration, adjustable gate drive voltage, and protection features make it an ideal choice for driving high-current loads with high efficiency and reliability. The IR2118 is perfect for powering automotive and industrial applications, where high performance and reliability are important factors.
The specific data is subject to PDF, and the above content is for reference
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