| Allicdata Part #: | IR2132STR-ND |
| Manufacturer Part#: |
IR2132STR |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Infineon Technologies |
| Short Description: | IC DRIVER BRIDGE 3-PHASE 28-SOIC |
| More Detail: | Half-Bridge Gate Driver IC Inverting 28-SOIC |
| DataSheet: | IR2132STR Datasheet/PDF |
| Quantity: | 1000 |
| Current - Peak Output (Source, Sink): | 250mA, 500mA |
| Base Part Number: | IR2132S |
| Supplier Device Package: | 28-SOIC |
| Package / Case: | 28-SOIC (0.295", 7.50mm Width) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Rise / Fall Time (Typ): | 80ns, 35ns |
| High Side Voltage - Max (Bootstrap): | 600V |
| Input Type: | Inverting |
| Series: | -- |
| Logic Voltage - VIL, VIH: | 0.8V, 2.2V |
| Voltage - Supply: | 10 V ~ 20 V |
| Gate Type: | IGBT, N-Channel MOSFET |
| Number of Drivers: | 6 |
| Channel Type: | 3-Phase |
| Driven Configuration: | Half-Bridge |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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IR2132STR is a high-voltage, high-performance N-channel MOSFET and IGBT gate driver IC. It provides overcurrent protection, undervoltage lockout protection, output clamp protection and so on. This gate driver IC offers gate drive signals for high power switches which control power flow in motor drives, solenoid and actuator control, and inductive loads. It offers a wide range of built-in protection features to ensure reliable operation of power switching devices and reduce system down time.
Application Field
IR2132STR has a variety of applications in motor control, industrial, commercial and residential systems. It is designed for driving high voltage, high current IGBT and MOSFET switches in applications such as:
- AC and DC motor control
- Industrial audio systems
- Variable speed drives
- Generator control systems
- Electric vehicle (EV) and hybrid electric vehicle (HEV) traction control
- Uninterruptible power supplies (UPS)
- Switchgear control applications
- Home and industrial automation systems
- Energy storage systems
Working Principle
The working principle of the IR2132STR is based on creating high-voltage control signals for powering high-voltage switches like IGBTs and MOSFETs. It provides a high-voltage, high-current driver that works in conjunction with a high-side MOSFET. This allows it to both switch on the MOSFET and protect it from overcurrent conditions and undervoltage lockouts.
The IR2132STR has two input pins (H1 and L1), two output pins (H2 and L2) and one reset pin. Input signals on H1 and L1 control the output signals on H2 and L2. When voltage applied to H1 is above the trip point, the gate drive signals on output L2 and H2 will be respectively low and high. When the voltage applied to H1 is below the trip point, the driver signals on H2 and L2 will be high and low. This allows power to be controlled according to the input signals from H1 and L1.
The IR2132STR also includes an advanced protection feature for overcurrent, overvoltage and undervoltage conditions. This can be achieved by sending a signal to the reset pin. The reset feature can be used to enable or disable gate drive signals from H2 and L2 based on the input signals from H1 and L1.
The IR2132STR also features an internal temperature sensing circuit which can be used to control the current output of the MOSFET or IGBT by controlling the gate drive signals on H2 and L2. The driver is designed to protect the MOSFET or IGBT against thermal runaway.
Conclusion
IR2132STR is a high-voltage, high-performance N-channel MOSFET and IGBT gate driver IC. It provides a wide range of protection features and integrated temperature sensing circuit, making it suitable for a wide range of power switching applications. The IR2132STR is designed to be used in motor control, industrial audio systems, variable speed drives, generator control systems, automotive, home and industrial automation systems.
The specific data is subject to PDF, and the above content is for reference
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IR2132STR Datasheet/PDF