IR2135PBF

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The IR2135PBF is an advanced power MOSFET and IGBT gate driver. This device is designed to provide a simple, low cost gate driving solution for high-side and low-side applications in power management, motor control, and other power conversion applications. The IR2135PBF is a versatile gate driver IC with a wide operating range and up to 2 A of source/sink capability, making it ideal for a variety of applications.

The IR2135PBF is a part of the Power Management, Integrated Circuits (PMIC) Series. This series includes devices for voltage regulation, interfacing, drive and power management. The IR2135PBF is a gate driver which interfaces high- and low-side N-channel MOSFETs, IGBTs, and BJTs to driver circuits. It provides source, sink and floating (inhibit) driver outputs with over-temperature, over-current, and over-voltage shutdown protection.

The IR2135PBF is designed to provide a reliable, efficient and cost effective solution for a variety of power management, motor control and other power conversion applications. Its wide operating range allows it to be used in a variety of configurations whether the power device needs to be driven from a positive or negative bias. The device also features a fast turn-on/turn-off time and a low output impedance which helps to minimize power dissipation and maximize efficiency.

The IR2135PBF includes two independent high-output drivers, a source driver and a sink driver. Both drivers feature an output voltage range from 3.3V to 15V and a peak current rating of 2 Amps. For enhanced system protection, the device includes internal over-temperature, over-current, and over-voltage shutdown protection. An internal charge pump allows for an output voltage greater than the input voltage.

The working principle of the IR2135PBF is simple and easy to understand. The device includes two independent gate drivers. A source driver is used to control the gate of an N-channel MOSFET and an IGBT. This driver features a high output voltage and current range, allowing it to drive even the most challenging of power devices. A sink driver is then used to control the gate of a P-channel MOSFET. This driver also features a high output voltage and current range which ensures the gate of the P-channel device is fully driven in the correct direction.

The IR2135PBF is a highly effective gate driver IC which provides reliable and efficient operation in applications where gate drive requirements are critical. Its combination of high current, output voltage range, and over-temperature, over-current, and over-voltage protection makes it an ideal solution for powering a variety of applications.

In addition to being a versatile gate driver IC, the IR2135PBF is also suitable for use in a wide range of applications such as battery management systems, automotive, industrial and robotics, UPS systems, and power factor correction. Its fast turn-on/turn-off time, low output impedance, and over-temperature, over-current, and over-voltage protection make it a reliable and cost-effective solution for applications that require high performance gate drives.

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