IRG4PC50FD-EPBF Discrete Semiconductor Products

Series:	--
Packaging:	Tube
Lead Free Status / RoHS Status:	--
Part Status:	Last Time Buy
Moisture Sensitivity Level (MSL):	--
IGBT Type:	--
Voltage - Collector Emitter Breakdown (Max):	600V
Current - Collector (Ic) (Max):	70A
Current - Collector Pulsed (Icm):	280A
Vce(on) (Max) @ Vge, Ic:	1.6V @ 15V, 39A
Power - Max:	200W
Switching Energy:	1.5mJ (on), 2.4mJ (off)
Input Type:	Standard
Gate Charge:	190nC
Td (on/off) @ 25°C:	55ns/240ns
Test Condition:	480V, 39A, 5 Ohm, 15V
Reverse Recovery Time (trr):	50ns
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-247-3
Supplier Device Package:	TO-247AC

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IRG4PC50FD-EPBF Application Field and Working Principle
The IRG4PC50FD-EPBF is a model of IGBT (insulated Gate Bipolar Transistor) from the renowned semiconductor manufacturer IR (International Rectifier). It is a vertical double-diffused MOS (VDMOS) device with great durability. This IGBT is a single device and is ideal for applications requiring fast switching speeds and low noise operation.This IGBT is designed to utilize a range of gate pulse widths and operation frequencies to suit a variety of high power switching operations. It is especially suited for power supplies, motor controls, UPS systems, telecommunication equipment, and renewable energy systems. Thanks to its fast switching capability and low on-state conduction losses, this device has found its way into a wide range of such applications.The IRG4PC50FD-EPBF has an extremely low Gate-Emitter voltage drop of only 2.0 V. This makes it highly energy efficient and helps to minimize the time it takes to switch from one state to the other. Moreover, this device also features a maximum blocking voltage of 600V, which allows it to handle higher voltage levels without having to use a series connection.The IGBT also has a high Input-Output Isolation of 3000 V, thereby providing protection against unexpected voltage transients. It also features a high EMI/RFI immunity, with a dv/dt rating of 5000 V/uS.The IRG4PC50FD-EPBF single IGBT works on the principle of voltage control of the drain-source current. The internal structure of a IGBT consists of two p-n junctions in series, the Gate-Emitter junction, and the Gate-Collector junction.The Gate-Emitter junction acts as a voltage controlled field effect transistor (FET). When an external voltage is applied to the Gate terminal, carriers are drawn, providing a channel between the source and the drain. The Gate-Collector junction acts as a reverse biased diode, ensuring current will flow through the channel in only one direction.The Gate terminal is used to control the current flow, by controlling the level of voltage applied to the Gate-Emitter junction. When the voltage is low, the current flow between the source and the drain is prevented, thereby cutting off the collector current. Conversely, when the voltage is increased, the current flow is allowed and the collector current is enabled.In summary, the IRG4PC50FD-EPBF single IGBT is a great device for providing fast switching speeds and low conduction losses in a wide range of applications. This IGBT is designed to efficiently handle high current levels and perform with great reliability, thanks to its low Gate-Emitter voltage drop and maximum blocking voltage of 600V. Moreover, the Input-Output isolation and EMI/RFI immunity provided by this device make it suitable for use in sensitive applications.

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