IRG4BC20U

Series:	--
Packaging:	Tube
Lead Free Status / RoHS Status:	--
Part Status:	Obsolete
Moisture Sensitivity Level (MSL):	--
IGBT Type:	--
Voltage - Collector Emitter Breakdown (Max):	600V
Current - Collector (Ic) (Max):	13A
Current - Collector Pulsed (Icm):	52A
Vce(on) (Max) @ Vge, Ic:	2.1V @ 15V, 6.5A
Power - Max:	60W
Switching Energy:	100µJ (on), 120µJ (off)
Input Type:	Standard
Gate Charge:	27nC
Td (on/off) @ 25°C:	21ns/86ns
Test Condition:	480V, 6.5A, 50 Ohm, 15V
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB

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Introduction

IRG4BC20U is a single, insulated gate bipolar transistor (IGBT) for use in high power applications, such as motor drives, welding machines, and power supplies. It has a high current capability, low losses and precise control, making it an ideal choice for solutions requiring high-power switching applications. This article will discuss the application field of IRG4BC20U and explain how its working principle helps it to achieve its performance.

Application Field

The IRG4BC20U suits a wide range of applications. As an IGBT, it is designed to take advantage of the low on-state losses of a MOSFET and the high common-source breakdown voltage of a bipolar transistor. This makes it ideal for high power switching applications. It is well suited for AC drives, DC drives, UPS, welding machines, power supplies, and industrial motor drive applications.The IRG4BC20U also has an inrush current limitation function, which is useful for controlling the current during starting of the load. The device has an extended temperature range, from -40 °C to +125 °C, and can operate in temperature variations as high as +150 °C. It also has very good immunity to surge current, making it well suited for switching load currents of up to 400 A.

Working Principle

The IRG4BC20U is an insulated gate bipolar transistor (IGBT). It works by using two control elements: a gate and an emitter. When a current is passed through the emitter, it creates an electric field. This electric field causes electrons to move to the gate, opening a gate-controlled channel. This channel allows current to flow between the source and drain, which enables switching of high power applications.The gate\'s voltage is adjustable, allowing the designer to control the device\'s switching speed and loss. By controlling the electric field, the designer can also control the current flow. This makes the device ideal for controlling motors, UPS systems, and power supplies.

Conclusion

The IRG4BC20U is an insulated gate bipolar transistor that is well suited for switching high power applications. It has a wide temperature range, inrush current limitation, and can handle up to 400 A surge current. Its working principle is based on the creation of an electric field between the gate and emitter, which allows the designer to control the switching speed and loss.

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