IRG4BC30UPBF Allicdata Electronics
Allicdata Part #:

IRG4BC30UPBF-ND

Manufacturer Part#:

IRG4BC30UPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 600V 23A 100W TO220AB
More Detail: IGBT 600V 23A 100W Through Hole TO-220AB
DataSheet: IRG4BC30UPBF datasheetIRG4BC30UPBF Datasheet/PDF
Quantity: 112
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Stock 112Can Ship Immediately
Specifications
Power - Max: 100W
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Test Condition: 480V, 12A, 23 Ohm, 15V
Td (on/off) @ 25°C: 17ns/78ns
Gate Charge: 50nC
Input Type: Standard
Switching Energy: 160µJ (on), 200µJ (off)
Series: --
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Current - Collector Pulsed (Icm): 92A
Current - Collector (Ic) (Max): 23A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Not For New Designs
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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The IRG4BC30UPBF is an Insulated Gate Bipolar Transistor (IGBT) designed for use in high power applications. The device has a maximum DC drain current rating of 30A and Chuck voltage rating up to 550V. It also has a maximum power dissipation of 480W and an effective switching frequency range of 5kHz to 30kHz.

IGBT Structure

The IRG4BC30UPBF has a typical IGBT structure consisting of an N-type semiconductor layer, a P-type layer, a Gate insulation layer and a Gate conductor layer. The N-type and P-type semiconductor layers form the bipolar junction of the device and are separated by the insulation layer. The Gate conductor layer acts as a gate for controlling the current flow through the device.

Working Principle

The working principle of an IGBT is based on two transistors connected in series. When a Gate-Source voltage (VGS) is applied across the Gate, it creates a channel between the N-type layer and the P-type layer allowing the current to flow between these two layers. When the VGS is removed, the transistor will discontinue the current flow across the N-type layer and the P-type layer.

Applications

The IRG4BC30UPBF IGBT is a high current, high power device and is suitable for a wide range of applications including: motor drives, power supplies, solar inverters and AC-DC converters. It is also widely used in industrial and telecom equipment. The device is also used in welders and inverter-based induction cooking and heating equipment.

Advantages

The major advantages of the IRG4BC30UPBF IGBT are its high power handling capacity, low switching losses, fast switching speeds and high peak current capability. It also has a high breakdown voltage and can be operated with relatively low Gate voltage (VGS) levels, making it ideal for applications where reliability and efficiency are required.

Conclusion

In conclusion, the IRG4BC30UPBF is a high power single IGBT which is ideal for a wide range of applications. It has excellent power handling capability and switching losses and offers fast switching speeds and high peak currents. The device is suitable for applications in motor drives, solar inverters, induction cooking and heating equipment and other power related applications.

The specific data is subject to PDF, and the above content is for reference

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