IRG4PC50UPBF

Power - Max:	200W
Supplier Device Package:	TO-247AC
Package / Case:	TO-247-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Test Condition:	480V, 27A, 5 Ohm, 15V
Td (on/off) @ 25°C:	32ns/170ns
Gate Charge:	180nC
Input Type:	Standard
Switching Energy:	120µJ (on), 540µJ (off)
Series:	--
Vce(on) (Max) @ Vge, Ic:	2V @ 15V, 27A
Current - Collector Pulsed (Icm):	220A
Current - Collector (Ic) (Max):	55A
Voltage - Collector Emitter Breakdown (Max):	600V
IGBT Type:	--
Moisture Sensitivity Level (MSL):	--
Part Status:	Not For New Designs
Lead Free Status / RoHS Status:	--
Packaging:	Bulk

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction to IRG4PC50UPBF

The IRG4PC50UPBF is a high voltage insulated gate bipolar transistor (IGBT) module with standard TO-220AB packaging and high gate-to-emitter voltage. This device is ideal for applications requiring a medium blocking or active clamping voltage and a high current capacity. The IGBT can be used in a variety of settings, including power supplies and motor control applications.

Application Field

The IRG4PC50UPBF is designed for use in a wide variety of applications that require high power and a medium blocking voltage. Commonly these include motor control, solar inverters, UPS systems and general industrial applications. This IGBT is also suitable for use in power supplies, welding applications and other applications where high blocking voltage and high current capacity is needed. The IRG4PC50UPBF can also be used for lighting, audio equipment and AC/DC conversion.

Benefits and Features

The IRG4PC50UPBF offers several benefits and features, including a low forward voltage drop, high safe operating area, and low gate-to-emitter capacitance. This IGBT has a wide range of common-mode breakdown voltages, enabling it to be used in a variety of applications. The IRG4PC50UPBF also features advanced short-circuit protection and an integrated driver circuit.

Working Principle

The working principle of the IRG4PC50UPBF IGBT module is fairly simple. The device works by controlling the voltage across the gate, which controls the flow of current between the source and drain. When a high positive voltage is applied to the gate, the transistor is opened, allowing current to flow from the source to the drain. When the voltage at the gate is low, the transistor is turned off and current no longer flows from the source to the drain. The IGBT can also be used in reverse, allowing current to flow from the drain to the source. The IRG4PC50UPBF also offers an integrated driver circuit which provides an additional level of control. The driver circuit is able to provide the necessary voltage and current levels to the gate to ensure that the IGBT is working as intended.

Conclusion

The IRG4PC50UPBF is a high voltage IGBT module with a wide array of applications. With its standard TO-220AB packaging and high gate-to-emitter voltage, the IRG4PC50UPBF is an ideal choice for motor control, solar inverters, UPS systems and general industrial applications. The device also offers a wide range of common-mode breakdown voltages, low forward voltage drop, high safe operating area and low gate-to-emitter capacitance, making it suitable for a variety of applications. The IGBT also includes an integrated driver circuit to provide additional control. With these benefits, the IRG4PC50UPBF is perfect for power supplies, welding applications and other applications that require high blocking voltage and high current capacity.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description