IRG4PH20KPBF Allicdata Electronics
Allicdata Part #:

IRG4PH20KPBF-ND

Manufacturer Part#:

IRG4PH20KPBF

Price: $ 2.01
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 1200V 11A 60W TO247AC
More Detail: IGBT 1200V 11A 60W Through Hole TO-247AC
DataSheet: IRG4PH20KPBF datasheetIRG4PH20KPBF Datasheet/PDF
Quantity: 125
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: $ 1.82700
10 +: $ 1.63863
100 +: $ 1.34240
500 +: $ 1.14278
1000 +: $ 0.96380
Stock 125Can Ship Immediately
$ 2.01
Specifications
Power - Max: 60W
Supplier Device Package: TO-247AC
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Test Condition: 960V, 5A, 50 Ohm, 15V
Td (on/off) @ 25°C: 23ns/93ns
Gate Charge: 28nC
Input Type: Standard
Switching Energy: 450µJ (on), 440µJ (off)
Series: --
Vce(on) (Max) @ Vge, Ic: 4.3V @ 15V, 5A
Current - Collector Pulsed (Icm): 22A
Current - Collector (Ic) (Max): 11A
Voltage - Collector Emitter Breakdown (Max): 1200V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Not For New Designs
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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The IRG4PH20KPBF is a popular IGBT (Insulated Gate Bipolar Transistor) used in a wide variety of applications. It was introduced by International Rectifier in 2002 and is now manufactured by Vishay Siliconix.

An IGBT is a type of semiconductor device, similar to a MOSFET (metal–oxide–semiconductor field-effect transistor), that combines the high switching speeds of a MOSFET with the high current carrying ability of a bipolar junction transistor (BJT). These properties make it ideal for use in high power, high frequency applications such as motor drives, power converters and welding.

The IRG4PH20KPBF is a single IGBT with an internal, reverse conducting, freewheeling diode. The IGBT is part of the high-speed IGBT family 3 segment of International Rectifier’s product portfolio, and is suitable for high frequency and high power applications, such as motor control and inverters. It has a Vce(on) breakdown voltage of 601-656V and a 1.2kV isolation voltage.

The working principle of an IGBT is similar to that of a BJT; it is based on a p-n-p-n structure with a gate terminal. When the voltage applied to the gate terminal exceeds that of the emitter, the device turns on and transport electrons. In the opposite case, the device turns off and the current stops flowing. This switching capability makes it ideal for use as a switch, allowing circuits to be rapidly switched on and off.

The IRG4PH20KPBF has a range of applications, including motor drives, power converters and inverters, and HVAC systems. It is a popular device for controlling the power of machines, such as electric motors, due to its high current handling capability and fast switching speed. It is also used in applications such as welding and power supplies, as it can provide a high level of regulation and stability.

The IRG4PH20KPBF is a reliable and efficient device, making it suitable for a wide range of applications. It can offer good performance and power savings, and its fast switching speed makes it the ideal choice for high frequency and high power applications. With its range of applications and numerous benefits, it is no wonder that the IRG4PH20KPBF has become a popular choice among engineers.

The specific data is subject to PDF, and the above content is for reference

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