IRG4PH40KDPBF Allicdata Electronics
Allicdata Part #:

IRG4PH40KDPBF-ND

Manufacturer Part#:

IRG4PH40KDPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 1200V 30A 160W TO247AC
More Detail: IGBT 1200V 30A 160W Through Hole TO-247AC
DataSheet: IRG4PH40KDPBF datasheetIRG4PH40KDPBF Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Stock 1000Can Ship Immediately
Specifications
Power - Max: 160W
Supplier Device Package: TO-247AC
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Reverse Recovery Time (trr): 63ns
Test Condition: 800V, 15A, 10 Ohm, 15V
Td (on/off) @ 25°C: 50ns/96ns
Gate Charge: 94nC
Input Type: Standard
Switching Energy: 1.31mJ (on), 1.12mJ (off)
Series: --
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 15A
Current - Collector Pulsed (Icm): 60A
Current - Collector (Ic) (Max): 30A
Voltage - Collector Emitter Breakdown (Max): 1200V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Not For New Designs
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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IRG4PH40KDPBF is one of the most popular and well-known insulated-gate bipolar transistors (IGBTs) in single applications. It is widely used in the high-power automation, power electronics systems, and other applications such as motor drives, UPSs, inverter systems, converter systems and many more. IGBTs are used to deliver high-power switching by regulating the current flow between two terminals without relying on a gate current. This type of transistor is highly efficient and cost-effective, making them perfect for various automation applications.

The IRG4PH40KDPBF transistor is made up of two components: an insulated gate and a bipolar junction transistor (BJT). It is composed of a p-type semiconductor, which is a metal oxide layer between two n-type semiconductor layers. The insulated gate of the device acts as a switch while the BJT acts as a current amplifier. This allows the device to operate at higher voltages, enabling it to provide higher power.

The insulated gate of the device is made up of two metal oxide layers, which act as a gate insulator. When the gate voltage is applied across the insulation layers, a high power electric field forms to create the switching action. The insulated gate and BJT are integrated in an insulated package, which helps in controlling the switch\'s ability to operate at the higher voltage levels. This helps reduce the heat generated from the device, resulting in more efficient and reliable performance.

When the power supply voltage is applied across the IGBT, the voltage increases and latches the device in the “on” position. The latch current is controlled by the gate voltage and the BJT. As the gate voltage is increased, the transistor is able to handle larger loads while still maintaining a low on-state resistance and a high switching speed. The device is able to handle large currents and is able to switch heavy loads at high frequency.

The IRG4PH40KDPBF transistor is used in a variety of applications, such as high-power applications, rectifier circuits, balanced amplifier circuits and PWM drivers. It is also widely used in high-power automation, power electronics systems and many other applications. The device is an excellent choice for heavy load applications and offers exceptional performance in a very small package. The device is also a cost-effective, efficient, and reliable solution for various applications.

The specific data is subject to PDF, and the above content is for reference

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