IRG4PH40UDPBF Allicdata Electronics
Allicdata Part #:

IRG4PH40UDPBF-ND

Manufacturer Part#:

IRG4PH40UDPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 1200V 41A 160W TO247AC
More Detail: IGBT 1200V 41A 160W Through Hole TO-247AC
DataSheet: IRG4PH40UDPBF datasheetIRG4PH40UDPBF Datasheet/PDF
Quantity: 227
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Stock 227Can Ship Immediately
Specifications
Power - Max: 160W
Supplier Device Package: TO-247AC
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Reverse Recovery Time (trr): 63ns
Test Condition: 800V, 21A, 10 Ohm, 15V
Td (on/off) @ 25°C: 46ns/97ns
Gate Charge: 86nC
Input Type: Standard
Switching Energy: 1.8mJ (on), 1.93mJ (off)
Series: --
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 21A
Current - Collector Pulsed (Icm): 82A
Current - Collector (Ic) (Max): 41A
Voltage - Collector Emitter Breakdown (Max): 1200V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Not For New Designs
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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The IRG4PH40UDPBF is a type of transistor known as an insulated gate bipolar transistor (IGBT). It is a type of switching transistor that combines the high-speed switching capability of a metal-oxide-semiconductor field-effect transistor (MOSFET) with the low saturation voltage of a bipolar junction transistor (BJT) to provide an efficient power-switching device. The IRG4PH40UDPBF is a single IGBT and is typically used as a power device in switching applications, such as AC and DC motors, UPS systems, light dimmers, and home appliance control circuits.

The IRG4PH40UDPBF is designed to have a switching frequency of up to 5MHz and a low saturation voltage of 2.2V. It has a low on-resistance of 0.09Ω and a collector-emitter voltage of 600V. It also has a high current carrying capability of 40A and is capable of switching up to 600V. It is rated for currents up to 8A and voltages up to 600V.

The working principle of the IRG4PH40UDPBF is based on the concept of a voltage-controlled insulated gate bipolar transistor (IGBT). It has three main parts: a gate, a drain, and a source. The gate is the control element of the IGBT. It controls the flow of current between the drain and source. The gate is usually driven by a transistor, such as a MOSFET. When the gate voltage is set to the necessary level, the drain-source current flows and the IGBT is activated.

The drain-source voltage of the IRG4PH40UDPBF is typically much lower than the gate-source voltage. This allows it to switch faster and more efficiently than a BJT or regular MOSFET. The voltage across the drain-source is also much lower than the other two, which helps to reduce losses in power conversion. The gate drive is also simpler than for typical MOSFETs and BJTs, as the voltage across the drain-source terminals is typically much lower than the gate-source voltage.

The IRG4PH40UDPBF is used in a wide variety of applications, including AC and DC motors, lighting and energy control circuits, home appliance control circuits, UPS systems, electronic ballasts, and many others. Its main advantages include fast switching speed, low on-resistance, low gate-drive requirements, and low saturation voltage. The IRG4PH40UDPBF is also able to withstand a wide range of operating conditions, which makes it a reliable and versatile power switch for many different applications.

The specific data is subject to PDF, and the above content is for reference

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